Seo Hyo1,Sang Yeol Lee1,Yoon HongJoon1
EMADE.LAB1
Seo Hyo1,Sang Yeol Lee1,Yoon HongJoon1
EMADE.LAB1
Thin film transistor research has been studied with high mobility and stability to implement high-definition displays and thin film transistor-based electronics, such as neuromorphic devices, multi-value devices and 3D integrated circuits. A metal capping(MC) TFT is a device that meets these needs of the times. The improvement of electrical properties and mobility of TFT will be studied using MC layers on channel layers. It can increase the mobility of TFT by adopting the metal layer on the channel material because the MC material has a relatively lower resistance than that of the channel materials. MC-layer is attributed to form strongly compacted ω-shape current-path by tunneling effect as a result of effective control of the surface potential by low resistance of MC-layer in channel region. In addition, the proposed device structure contributes to the changes in transistor performance when electric field is applied to the MC layer step by step. This could suggest the possibility of the application for contact sensors with high response due to high mobility of MC TFTs.