Plenary Speakers
Fred Roozeboom, Technische Universiteit Eindhoven & TNO - Holst Centre
Technical Developments of Thermal Annealing in the Past Half-Century, and Future Perspectives
Hitoshi Wakabayashi, Tokyo Institute of Technology
Novel Processes and Devices including 2D Materials
Invited Speakers
Temel Buyuklimanli, EAG Laboratories
Overview of Implantation Metrology
Fuccio Cristiano, Laboratory for Analysis and Architecture of Systems
Implant/Anneal Simulation and Defect Evolution in Si, Ge and SiGe
Ray Duffy, Tyndall National Institute
Deposited Layers as Doping Sources for 3D Conformal Applications
Oleg Gluschenkov, IBM Research/Albany Nanotech
Doping and Laser Annealing Applications for FinFETs, Contacts, and Materials Modification
Jack Hwang, Intel Corporation
Flash Annealing
Lubek Jastrzebski, Semilab
DPLI (Defect Photoluminescence Imaging) to Monitor Defect Formation During Ion Implantation and Annealing
Didier Landru, Soitec
Smart Cut, FD-SOI and Integration Challenges
Roberta Nipoti, Consiglio Nazonale delle Ricerche Institute for Microelectronics and Microsystems (CNR-IMM Bologna)
SiC Implant and Anneal
Alexander Scheit, IHP Solutions GmbH
Flash Annealing for the Worldwide Fastest SiGe HBT
Kyoichi Suguro, Carlit Holdings
Annealing Overview
Toshiyuki Tabata, Laser Systems & Solutions of Europe
Activation of Dopants in Si/SiGe using Laser Annealing
Hao Yu, imec
Advanced Contacts for CMOS