Speakers

Tony Renau, Varian Semiconductor Equipment (retired)
Development of Ion Implantation Technology: 1987-2022

Fred Roozeboom, University of Twente
Technical Developments of Thermal Annealing in the Past Sixty Years, and Future Perspectives

Hitoshi Wakabayashi, Tokyo Institute of Technology
Novel Processes and Devices including 2D Materials

Temel Buyuklimanli, EAG Laboratories
Overview of Implantation Metrology

Fuccio Cristiano, Laboratory for Analysis and Architecture of Systems
Implant/Anneal Simulation and Defect Evolution in Si, Ge and SiGe

Oleg Gluschenkov, IBM Research/Albany Nanotech
Doping and Laser Annealing Applications for FinFETs, Contacts, and Materials Modification

Lubek Jastrzebski, Semilab
DPLI (Defect Photoluminescence Imaging) to Monitor Defect Formation During Ion Implantation and Annealing

Jacob Jensen, Intel Corporation
Flash Annealing

Tsunenobu Kimoto, Kyoto University
SiC Implant and Anneal

Didier Landru, Soitec
Smart Cut, FD-SOI and Integration Challenges

Alexander Scheit, IHP Solutions GmbH
Flash Annealing for the Worldwide Fastest SiGe HBT

Kyoichi Suguro, SUGSOL Corporation
Where is the annealing technology going for better device performance?

Toshiyuki Tabata, Laser Systems & Solutions of Europe
Activation of Dopants in Si/SiGe using Laser Annealing

Hao Yu, imec
Advanced Contacts for CMOS