Chang-Jing Liu1,Wen-ya Lee1
Department of Chemical Engineering and Biotechnology, National Taipei University of Technology1
Chang-Jing Liu1,Wen-ya Lee1
Department of Chemical Engineering and Biotechnology, National Taipei University of Technology1
Stretchable electronic materials with a high dielectric constant are promising for low-voltage-driven devices. This work demonstrates a stretchable dielectric layer using poly (acrylonitrile-co-butadiene) (NBR), a higher dielectric constant for the dielectric layer. The stretchable dielectric layer is cross-linked using the thiol-ene reaction between the double bond and the thiol functional groups. It has also been found that the chemical structure of thiol functional groups is capable of determining the device's memory characteristics. The CN triple bond in the NBR polymer structure is highly polarized, thus leading to a high capacitance. The highest capacitance can reach 60 nF/cm<sup>2</sup>, and the dielectric constant can reach 14.6. Moreover, the mobility can approach 2.87 cm<sup>2</sup>V<sup>-1</sup>s<sup>-1</sup>, the on-off ratio reaches 10<sup>6</sup>, and the threshold voltage is 0 V. In addition, by observing the hysteresis characteristic of the device, it can be found that the memory windows of the crosslinked NBR dielectric showed a large window of 3.14 V under a voltage program voltage of -5 V. This results indicates that the crosslinking density can affect charge retention capability of the devices. The memory characteristics and synaptic behavior of devices have also been achieved using cross-linked NBR-based transistors. This work provides new insight into designing neuromorphic devices for the next generation of artificial intelligence.