Kyoungdu Kim1,Jaewon Jang1
School of Electronics and Electrical Engineering1
Kyoungdu Kim1,Jaewon Jang1
School of Electronics and Electrical Engineering1
It is widely known that the admirably pure materials such as metal oxide can be easily obtained by solution-gelation (sol-gel) method. Also, it is remarkable that we are readily able to manufacture the metal oxide-based devices and measure their characteristics simply using several steps. Moreover, using water-based metal-oxide precursors such as an ink is beneficial for mass-production desired in the industry due to the high throughput, low-cost manufacturing, and simple process. Also, these inks can be used for a number of techniques such as direct writing printing (non-contact), transfer printing (direct-contact), inkjet printing, and aerosol-jet and spray printing.<br/>In this experiment, a solution-gelation (sol-gel) processed Y<sub>2</sub>O<sub>3</sub> resistive random-access memory (RRAM) devices which showed bipolar characteristics were fabricated. The chemical, structural, and electrical characteristics of the sol-gel based RRAM devices were studied as the liquid-based precursor concentration (0.05 M, 0.2 M, 0.6 M) changed. The Y<sub>2</sub>O<sub>3</sub> thickness grow thicker proportionally as the concentration increased. Furthermore, the proportion of oxygen vacancies in Y<sub>2</sub>O<sub>3</sub> oxide escalated. The devices which contained minimum oxygen vacancy concentration did not showed bipolar RRAM electrical characteristic. Moreover, the devices with the thickest Y<sub>2</sub>O<sub>3</sub> layer exhibited weak resistive switching performance. Among them, the 37 nm thickness of Y<sub>2</sub>O<sub>3</sub> layer was an optimal in terms of resistive random access memory properties with low SET voltage (less than 1.5 V) and RESET voltage (-15.0 V). Additionally, the devices presented the longest retention (over 10<sup>3</sup> s), endurance (over 10<sup>2</sup> cycles), and highest ON/OFF ratio (over 10<sup>4</sup>).