HaeIn Kim1,Jaewon Jang1
Kyungpook National University1
HaeIn Kim1,Jaewon Jang1
Kyungpook National University1
In this work, we investigated the effect of Al doping on the switching behavior of sol-gel processed Ag/Y<sub>2</sub>O<sub>3</sub>/ITO RRAM devices. High-quality pure metal oxide layers can be simply deposited via sol-gel process. Their chemical, structural, and electrical properties can be easily tuned by adjusting the precursor component ratio. Moreover, the liquid phase precursor solution can be used for large-area applications, such as in dip-coating, printing techniques, and spin-coating.<br/>Too much oxygen vacancies in the insulating layers of RRAM devices may degrade nonvolatile memory characteristics and increase the leakage current, thereby reducing HRS/LRS ratio. To overcome this issue, we doped Y<sub>2</sub>O<sub>3</sub> layer with Al and observed the change of memory characteristics while adjusting Al doping concentration. Undoped RRAM devices exhibited relatively poor endurance characteristics of approximately 30 switching cycles with a small resistive window (~10). But, 50 % Al-doped RRAM devices showed more than 200 switching cycles with a decent resistive window (>10<sup>2</sup>). In addition, it was confirmed that as the doping concentration of Al increased, the oxygen vacancy ratio decreased and the lattice oxygen ratio increased in the XPS measurement. These results confirm that appropriate concentration of Al doping can reduce excessive oxygen vacancies and thus improve the nonvolatile memory characteristics of Y<sub>2</sub>O<sub>3</sub>-based RRAM devices.