MRS Meetings and Events

 

EL18.09.19 2023 MRS Spring Meeting

Generation of Additional Logic States in Molecular-Switch Embedded Anti-Ambipolar Transistor for Realizing Multi-Valued Logic System

When and Where

Apr 12, 2023
5:00pm - 7:00pm

Moscone West, Level 1, Exhibit Hall

Presenter

Co-Author(s)

Chan So1,Dae Sung Chung1,Seong Hoon Yu1,Syed Zahid Hassan1

Postech1

Abstract

Chan So1,Dae Sung Chung1,Seong Hoon Yu1,Syed Zahid Hassan1

Postech1
Developing logic circuit systems that have high data throughput levels and mechanical flexibility is becoming more and more important with expanding market of AI and autonomous driving. It is known that the organic thin film transistor can meet the above conditions. However, organic thin film transistors have weaknesses in high-temperature processes and fine patterning. Therefore, there is a limit to increasing the speed of data process by improving the degree of integration. As an alternative to solving this problem, a logic (MVL) system has been proposed. The traditional logic inverter system can perform 2<sup>n</sup> processing operations, but the triangular logic inverter system can process 3<sup>n</sup> processing operations, which is about 160% more efficient than the traditional logic inverter.<br/><br/>The mechanism of multi-valued logic system is described below. If n-type semiconductor and p-type semiconductor are in lateral contact, the current graph will show the effects like ‘union’ in the sets. On the other hand, if two semiconductors contact in vertical way, the current graph will show the effects of ‘intersection’. Interestingly, in the case of one semiconductor gets over the other at lateral contact to create both lateral and vertical contacts, both effects happen and an additional middle logic state could be generated. This heterojunction, which is called anti-ambipolar, changes the sign of the slope of the drain electrode current value in a specific voltage range. However, as we are planning to make higher level of base, you need a very complex structure. Therefore, a new strategy is needed to implement a high-base logic system. Accordingly, we tried to introduce molecular switch to develop MVL circuits.<br/><br/>As a result, diarylethene, a molecular switch that can change its structure by light, was able to successfully decrease the current level of embedded organic polymer. In the electric field condition, charge carriers move from one electrode to the other. When UV light is irradiated to DAE, the HOMO level of DAE rises as the molecule becomes closed form. Then UV irradiation causes them to be trapped in the HOMO of DAE, which leads to the reduction of overall current level and make additional middle logic state. The reduced current and the shift of NTC range allow us to distinguish different states.<br/><br/>In this work, We demonstrated anti-ambipolar transistor(AAT) and MVL system that used it. Most of DAEs were successfully co-deposited with organic semi-conductor(DNTT). It is believed that molecular switch that has less sterically hindered characteristics obtained better drain current and mobility due to securing free volume for molecular switching.

Keywords

polymer

Symposium Organizers

Ho-Hsiu Chou, National Tsing Hua University
Francisco Molina-Lopez, KU Leuven
Sihong Wang, University of Chicago
Xuzhou Yan, Shanghai Jiao Tong University

Symposium Support

Bronze
Azalea Vision
MilliporeSigma
Device, Cell Press

Session Chairs

Ho-Hsiu Chou
Francisco Molina-Lopez
Sihong Wang

In this Session

EL18.09.01
Photosensitisation of Inkjet-Printed Graphene with Stable All-Inorganic Perovskite Nanocrystals

EL18.09.02
Contact Resistance of Low-Voltage n-Channel Organic Thin-Film Transistors Based on Three Different Organic Semiconductors

EL18.09.03
Highly Efficient Ternary Near-Infrared Organic Photodetectors for Biometric Monitoring

EL18.09.04
Direct Printing of Suspended Metal Oxides Nanowires on MEMS Chip as Gas Sensor

EL18.09.05
A Pen-on-Paper Graphene Oxide-Based Nanocomposite for Multitype Strain Sensing

EL18.09.06
Printed Memristors for Memory, Computing and Hardware Security

EL18.09.07
Formation of NiSi by Pulsed Laser Annealing on Contact Resistance Reduction and its Applications on Flexible Inverter and 6T-SRAM

EL18.09.08
Thiol-ene Chemistry in the Dielectric Layer Manipulating Polymer-based Devices from Transistors to Non-volatile Memory Devices

EL18.09.09
Photocurable Stretchable Silver Nanocomposite Electrodes

EL18.09.10
Morphological Investigation of High Performance Bulk Heterojunction Active Layer to Probe the Origin of Device Instability

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