MRS Meetings and Events

 

EL18.09.43 2023 MRS Spring Meeting

Improved Positive Bias Illumination Stability of Sol-gel Processed SnO2 Thin-Film Transistor by Depositing Ultra-thin Al Layers

When and Where

Apr 12, 2023
5:00pm - 7:00pm

Moscone West, Level 1, Exhibit Hall

Presenter

Co-Author(s)

Taehun Lee1,Jaewon Jang1

Kyungpook National University1

Abstract

Taehun Lee1,Jaewon Jang1

Kyungpook National University1
We demonstrate an ultra-thin aluminum layer deposited sol-gel processed SnO<sub>2</sub> thin-film transistors (TFTs) showing high stability performance under bias stress condition. The sol-gel process, one of the printing techniques, is a useful method for depositing metal oxide materials having a high film quality and purity. The properties of deposited film can be simply controlled by adjusting the concentration or other variables of precursor. The advantages of this process allows fabricating metal-oxide layer in large-area applications. Metal Oxide TFTs have gradually alternated silicon based TFTs due to their high field effect electron mobility, simple fabrication process and transparency. Metal Oxide TFTs, Unfortunately, contain electrical instability problems because of oxygen vacancies and defects that are the origin of trap formation. To solve this problem, we deposited an ultra-thin aluminum layer on the active layer of SnO<sub>2</sub> TFTs. In this experiment, we first fabricated pure SnO<sub>2</sub> TFTs via sol-gel process. Then aluminum was thermally evaporated on the prepared device followed by an annealing process at 300°C for 20 minutes. Under the positive bias illumination stress, pure SnO<sub>2</sub> TFTs have a mobility change from 6.27 cm<sup>2</sup>/Vs to 5.91 cm<sup>2</sup>/Vs and +6.51 V threshold voltage shift. Meanwhile, SnO<sub>2</sub> TFTs with Al deposited layer show the mobility change from 6.03 cm<sup>2</sup>/Vs to 5.51 cm<sup>2</sup>/Vs and +1.47 V threshold voltage difference. The results reveal that the deposited aluminum layer clearly advanced the positive bias illumination stability. We expect that the ultra-thin aluminum layered SnO<sub>2</sub> TFTs are an excellent candidate for high stability application in transparent electronics.

Keywords

electrical properties | oxide

Symposium Organizers

Ho-Hsiu Chou, National Tsing Hua University
Francisco Molina-Lopez, KU Leuven
Sihong Wang, University of Chicago
Xuzhou Yan, Shanghai Jiao Tong University

Symposium Support

Bronze
Azalea Vision
MilliporeSigma
Device, Cell Press

Session Chairs

Ho-Hsiu Chou
Francisco Molina-Lopez
Sihong Wang

In this Session

EL18.09.01
Photosensitisation of Inkjet-Printed Graphene with Stable All-Inorganic Perovskite Nanocrystals

EL18.09.02
Contact Resistance of Low-Voltage n-Channel Organic Thin-Film Transistors Based on Three Different Organic Semiconductors

EL18.09.03
Highly Efficient Ternary Near-Infrared Organic Photodetectors for Biometric Monitoring

EL18.09.04
Direct Printing of Suspended Metal Oxides Nanowires on MEMS Chip as Gas Sensor

EL18.09.05
A Pen-on-Paper Graphene Oxide-Based Nanocomposite for Multitype Strain Sensing

EL18.09.06
Printed Memristors for Memory, Computing and Hardware Security

EL18.09.07
Formation of NiSi by Pulsed Laser Annealing on Contact Resistance Reduction and its Applications on Flexible Inverter and 6T-SRAM

EL18.09.08
Thiol-ene Chemistry in the Dielectric Layer Manipulating Polymer-based Devices from Transistors to Non-volatile Memory Devices

EL18.09.09
Photocurable Stretchable Silver Nanocomposite Electrodes

EL18.09.10
Morphological Investigation of High Performance Bulk Heterojunction Active Layer to Probe the Origin of Device Instability

View More »

Publishing Alliance

MRS publishes with Springer Nature