MinWoo Jeong1,Minhyouk Kim1,Jun Su Kim1,Tae Uk Nam1,Ngoc Thanh Phuong Vo1,Lihua Jin2,Tae Il Lee3,Jin Young Oh1
Kyung Hee University1,University of California, Los Angeles2,Gachon University3
MinWoo Jeong1,Minhyouk Kim1,Jun Su Kim1,Tae Uk Nam1,Ngoc Thanh Phuong Vo1,Lihua Jin2,Tae Il Lee3,Jin Young Oh1
Kyung Hee University1,University of California, Los Angeles2,Gachon University3
Despite the recent application of metallization for stretchable organic thin-film transistor (OTFT), it is challenging in terms of crack-based, limited material and excessive deformation of target materials. Herein, we report a mechanically robust and intrinsically stretchable metallization on an stretchable semiconductor film based on metal-semiconductor intermixing. We deposited noble metals (Ag, Au and Cu) on stretchable semiconductor film and found that vaporized silver forms most continuous intermixing layer during thermal evaporation among three noble metals because of its high diffusivity. The Ag metallized film has a high conductivity (>10<sup>4</sup> S/cm) even under 100% strain stretching and durability that maintains its conductivity without delamination even after 10,000 stretching cycles at 100% strain and several adhesive-tape tests. Furthermore, a native silver oxide (Ag<sub>x</sub>O) layer was formed on the interface between stretchable semiconductor film and metallized silver layer to facilitate efficient hole injection and transport, which transcends previously reported stretchable electrodes for OTFTs.