MRS Meetings and Events

 

EL19.10.13 2023 MRS Spring Meeting

Magnetic Edge Doping of Chalcogenide-based Topological Insulators via Solvothermal Methods for Intrinsic Time Reversal Symmetry Breaking

When and Where

Apr 13, 2023
5:00pm - 7:00pm

Moscone West, Level 1, Exhibit Hall

Presenter

Co-Author(s)

Gabriel Marcus1,David Carroll1,Timothy Carlson1

Wake Forest University1

Abstract

Gabriel Marcus1,David Carroll1,Timothy Carlson1

Wake Forest University1
Topological insulators (TIs) represent an intriguing class of materials that possess time symmetry- protected spin currents at their edge. Application of a magnetic field to such systems causes symmetry breaking and establishes a persistent charge current that circulates around the TI perimeter. Although external magnetic fields are typically discussed in the context of TI time reversal symmetry breaking, doping with magnetic materials might generate intrinsic fields that yield symmetry collapse while simultaneously allowing for donation of carriers that strengthen the charge current. Here, we present our work undertaken to produce chalcogenide-based TIs and subsequently achieve edge modulation doping with magnetic metals like iron or nickel. A versatile and straightforward solvothermal wet chemistry approach was used to synthesize high yields of bismuth telluride (Bi<sub>2</sub>Te<sub>3</sub>) platelets which have the potential for nanoparticle growth at reactive edge sites. Different concentrations of iron and nickel dopants were added to solutions of Bi<sub>2</sub>Te<sub>3</sub> and the resultant materials were characterized to assess the extent of magnetic edge doping. A variety of techniques including electron microscopy (TEM, SEM, SAED), spectroscopy (XPS, EDS, XRD), Hall Effect measurements, and magnetic force microscopy were used to visualize nanoparticle formation, quantitatively assess material composition, confirm host material doping, and determine magnetic response. Preliminary results indicate that edge nanoparticle formation is taking place; experiments to optimize dopant growth, verify carrier injection from dopant to host and understand the influence of such dopants on the host material’s properties are ongoing. If magnetically doped chalcogenide TIs become a reality, they may play significant roles in quantum device and quantum information applications thanks to enhanced persistent charge currents that could maintain entanglement at relatively high temperatures.

Symposium Organizers

Paul Berger, The Ohio State University
Supratik Guha, The University of Chicago
Francesca Iacopi, University of Technology Sydney
Pei-Wen Li, National Yang Ming Chiao Tung University

Symposium Support

Gold
IEEE Electron Devices Society

Session Chairs

Paul Berger
Pei-Wen Li

In this Session

EL19.10.01
How Changes in the Crystal Temperature and Doping Concentration Impact Upon the Steady-State and Transient Electron Transport Within Gallium-Aluminum-Nitride/Gallium Nitride Heterojunctions

EL19.10.02
Testing the Compatibility of Photothermal Lithography with Commercial Lithography Equipment

EL19.10.03
Single Crystalline Ge Thin Film Grown on C-Plane Sapphire by Molecular Beam Epitaxy

EL19.10.04
Cubic Boron Nitride’s Electron Transport

EL19.10.05
Ultrawide Bandgap BN based Vertical Power Diodes via TCAD Simulation

EL19.10.07
Design and Fabrication of AlGaN/GaN Multiple p-Channel Schottky Barrier Diodes

EL19.10.08
Growth of Germanium on GaAs (001) Substrates via Molecular Beam Epitaxy (MBE)

EL19.10.10
Memory Characteristic of Organic/Inorganic Hybrid Synaptic Transistor with Silk Fibroin Gate Insulator

EL19.10.11
ALD-prepared Metal Nitrides with Tunable (Super)conductivity by Ion Energy Control

EL19.10.12
Universal Ligands for Dispersion of Two-Dimensional MXene in Organic Solvents

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