Stephen O'Leary1,Yana Wang1,Michael Shur2,Walid Hadi3
University of British Columbia1,Rensselaer Polytechnic Institute2,Florida State University3
Stephen O'Leary1,Yana Wang1,Michael Shur2,Walid Hadi3
University of British Columbia1,Rensselaer Polytechnic Institute2,Florida State University3
Noting that at the interface of gallium-aluminum-nitride with gallium nitride, a two-dimensional electron gas will form, we examine how the electron transport characteristics within such a gas vary in response to changes in the crystal temperature and the doping concentration. For the purposes of this analysis, Monte Carlo electron transport simulations are pursued. A critical comparison with results corresponding to bulk gallium nitride is considered. The device implications of these results then will be explored.