Calbi Gunder1,Emmanuel Wangila1,Hryhorii Stanchu1,Solomon Ojo1,Sudip Acharya1,Mohammad Alavijeh1,Shui-Quing Yu1,Gregory Salamo1
University of Arkansas1
Calbi Gunder1,Emmanuel Wangila1,Hryhorii Stanchu1,Solomon Ojo1,Sudip Acharya1,Mohammad Alavijeh1,Shui-Quing Yu1,Gregory Salamo1
University of Arkansas1
In this report the growth of Germanium (Ge) has been investigated on GaAs (001) substrates via molecular beam epitaxy (MBE). Ge was grown both on GaAs and AlAs buffer layers to compare the difference in film quality, surface morphology and optical characteristics via photoluminescence (PL). From this investigation we were able to achieve higher-quality Ge layers when grown on a 30 nm AlAs buffer. In addition to this we have observed atomic steps of Ge when the growth temperature is between 500-600°C. Developing a high-quality Ge layer on III-V opens the possibility of it being used as an additional surface to investigate the growth of high tin content GeSn and or SiGeSn systems which are of significant interest in the study of microwave photonic applications.