María Eva Nieto Piñero1,Christian Lanza2,Javier Martín Sánchez2,Fernando Chacón1,Beatriz Galiana3,Isabel Muñoz Ochando4,María del Sol López de Andrés5,Rosalia Serna1
Instituto de Óptica Daza de Valdés1,Universidad de Oviedo2,Universidad Carlos III3,Instituto de Ciencia y Tecnología de Polímeros4,Universidad Complutense de Madrid5
María Eva Nieto Piñero1,Christian Lanza2,Javier Martín Sánchez2,Fernando Chacón1,Beatriz Galiana3,Isabel Muñoz Ochando4,María del Sol López de Andrés5,Rosalia Serna1
Instituto de Óptica Daza de Valdés1,Universidad de Oviedo2,Universidad Carlos III3,Instituto de Ciencia y Tecnología de Polímeros4,Universidad Complutense de Madrid5
2D-Transition Metal oxides (TMOs), although less studied than the well-known 2D transition metal dichalcogenides(2D-TMCs) are appealing due to some specific advantages. Like the TMCs they are semiconductors, however they are less contaminant and offer a large potential for tuning their electro-optical properties by varying their stoichiometry. In particular, MoO<sub>3</sub> is transparent and shows a wide bandgap (>3 eV) and a high dielectric constant k ~ 500. Additionally, orthorhombic α-MoO<sub>3</sub> possesses the well-known layered crystal structure of MoO<sub>3</sub> which offers the possibility to create two dimensional (2D) morphologies.[1] In this context, 2D MoO<sub>3</sub> has shown extraordinary properties such as anisotropic polariton propagation,[2] and is an ideal material for electronic applications for high power electronics and short wavelength optoelectronics.<br/><br/>Currently most of the work in 2D-semiconductors is still made using small flakes obtained from mechanically exfoliated single crystals, however there is no doubt that it will be advantageous to deposit large 2D-strucutres as this will have tremendous impact both for the manipulation an integration of these materials.[3] In context we show the successful preparation of nanometer thick thin films formed by 2D MoO<sub>3</sub> crystals by a pulsed laser deposition-based process that starts with the deposition in vacuum from a MoO<sub>3</sub> target of dense, amorphous and continuous substoichimetric MoO<sub>3-X </sub>layers. Subsequently, the films are annealed in air up to 300 C while following the evolution of their optical properties in-situ in the UV-VIS wavelength region by spectroscopic ellipsometry. When the temperature reaches 250 C a clear change in the optical properties starts that is related to the films crystallization. Analysis of the optical properties shows how the initially absorbing films with a metallic-like behavior after the annealing become transparent in the NIR and VIS regions, and shows a band gap >3 eV. This optical change is related to the formation of large rectangular micron size α-MoO<sub>3</sub> single crystals with a thickness of the order 10 nm easily observable by optical microscopy. A full characterization of the morphology, structure and stoichiometry has been confirmed by X-ray diffraction analysis, Raman spectroscopy, AFM and transmission electron microscopy. We will show the distinct fetures of the measured dielectric constant of the 2D MoO<sub>3</sub> microcrystals and compare them to that of the bulk in terms of defects and lattice stress. Finally, we analyze the implications for different optoelectronic applications.<br/><br/>[1] I. A. de Castro, et al., . Molybdenum Oxides – From Fundamentals to Functionality. Adv. Mater. 29, 1-31 (2017).<br/>[2] W. Ma, et al In-plane anisotropic and ultra-low-loss polaritons in a natural van der Waals crystal. <i>Nature</i>. <b>562</b>, 557–562 (2018).<br/>[3] J-H Kim, et al. Van der Waals epitaxial growth of single crystal α-MoO3 layers on layered materials growth templates. <i>2D Mater.</i> <b>6</b> (2019).