MRS Meetings and Events

 

NM04.05.01 2023 MRS Spring Meeting

Nanofluidics: Transport In Chirality-Controlled Carbon Nanotube Porins (CNTPs)

When and Where

Apr 12, 2023
5:00pm - 7:00pm

Moscone West, Level 1, Exhibit Hall

Presenter

Co-Author(s)

Sidi Zhao1,2

University of California, Merced1,Lawrence Livermore National Laboratory2

Abstract

Sidi Zhao1,2

University of California, Merced1,Lawrence Livermore National Laboratory2
Carbon nanotubes (CNTs) with different chirality are great models to study electronic properties that influence ion transport through single-channel nanotubes. Based on band gap theory, CNTs in different chirality with different curvatures of tube surface may have different conductivity. Herein we report ion transport through chirality-separated pure (6,5), (7,4), and (7,5)/(8,4) CNT porins (CNTPs). Single channel conductance from chirality-pure, yet almost identical in diameter CNTPs indicates that electronic properties have a weak effect on ion transport. Furthermore, we measured ion transport through fluorescence ultrashort nanotubes (FUNs) – functionalized channels with defective walls. These channels have significantly lower conductance compared to the pure (6, 5) CNTPs. Besides, ions can successfully transport through CNTP dispersed by surfactants such as CHAPS and SDOC, the ion conductance of CNTPs is independent of the surfactant used to cut the CNTs.

Keywords

biomimetic | nanostructure

Symposium Organizers

Fatemeh Ahmadpoor, New Jersey Institute of Technology
Wenpei Gao, North Carolina State University
Mohammad Naraghi, Texas A&M University
Chenglin Wu, Missouri University of Science and Technology

Session Chairs

Congjie Wei
Chenglin Wu

In this Session

NM04.05.01
Nanofluidics: Transport In Chirality-Controlled Carbon Nanotube Porins (CNTPs)

NM04.05.02
Proximity Growth of Monolayer MoS2 Films via Concurrent O2 Etching and Sulfurization

NM04.05.04
Quasi-van der Waals Epitaxial Recrystallization of Gold Thin Film into Crystallographically Aligned Single Crystals

NM04.05.05
Multi-Printed MoS2 Semiconductor and Source and Drain Electrodes Using Jet-Printing for TFT Application

NM04.05.07
Realization of the Ideal vdW Contact Between Metals and Two-Dimensional Semiconductors Through Schottky Diode

NM04.05.08
Measuring Seebeck Coefficient of High Resistance 2D PtSe2 Thin Film by Annealing Process

NM04.05.10
Thermoelectric Properties of the Thickness-Modulated PtTe2 Thin Films

NM04.05.11
Crystal Structure Identification and Application of Type-II Red Phosphorus

NM04.05.12
Surface Modification of Molten Salt Etched Ti3C2Tz MXene by Annealing and their Tribological Evaluation

NM04.05.14
High Quality 2D α-MoO3 Microcrystals Produced by Laser Processing

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