Hyeok-Jun Kwon1,Si-Hoo Kim1,Min-Sung Kang1,Jae Won Choi1,Yun-Ho Kim1,Jung-Min Cho1,Minjeong Kim1,Chanho Park1,No-Won Park1,Gil-Sung Kim1,Sang Kwon Lee1
Chung-Ang University1
Hyeok-Jun Kwon1,Si-Hoo Kim1,Min-Sung Kang1,Jae Won Choi1,Yun-Ho Kim1,Jung-Min Cho1,Minjeong Kim1,Chanho Park1,No-Won Park1,Gil-Sung Kim1,Sang Kwon Lee1
Chung-Ang University1
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) -based homo- and hetero-structures result in unusual route to drastically increase the Seebeck coefficient through the interface-induced Seebeck effect. Such intriguing properties have led to us to study the in-plane Seebeck coefficient and electrical conductivity of thickness-controlled a relatively new class of metallic 2D TMDCs, 2D platinum ditelluride (PtTe<sub>2</sub>) thin films. We followed a series of processes, including a simple tellurization of the Pt thin films with ~5, ~10, ~20, and ~30 nm-thick and a wet chemical transfer on sapphire substrates, to measure in-plane thermoelectric properties of the 2D PtTe<sub>2</sub> thin films. We observe the higher in-plane Seebeck coefficient and power factor of ≥ 3.0 μV/K and ≥ 16.0 μW/mK<sup>2</sup> in the thicker 2D PtTe<sub>2</sub> (≥ 20 nm) films, which is related to the more semimetallic transition as increasing PtTe<sub>2</sub> film thickness. These in-plane TE properties of the thickness-modulated 2D PtTe<sub>2</sub> thin films that are anticipated to offer an alternative approach for fabricating high-efficiency TE devices comprising vertically stacked 2D/2D hetero-structures (i.e., PtTe<sub>2</sub>/MoS<sub>2</sub> and PtTe<sub>2</sub>/PtSe<sub>2</sub>)