MRS Meetings and Events

 

EQ09.09.15 2022 MRS Fall Meeting

Physical Unclonable Function Devices Based on Randomness of Grain-Boundary Formation in Calcium Titanate Perovskite Layers

When and Where

Nov 30, 2022
8:00pm - 10:00pm

Hynes, Level 1, Hall A

Presenter

Co-Author(s)

Subin Lee1,Hocheon Yoo1

Gachon University1

Abstract

Subin Lee1,Hocheon Yoo1

Gachon University1
The stability of physical unclonable function (PUF) devices, regarded as the fingerprint of security applications, is the crucial point. Hence, we present a robust PUF device that maintains its randomness uninfluenced by ambient gases such as O<sub>2</sub> or H<sub>2</sub>O. We synthesized calcium titanate (CTO) perovskite layers and controlled their grain boundary morphologies. The grain boundaries were formed differently by the annealing temperature, and as grain boundaries increased, the current value was distributed randomly. We also performed X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscope, and UV-Visible spectrophotometer to investigate the CTO morphological change. The fabricated PUF devices which were annealed at 650 <sup>o</sup>C and 800 <sup>o</sup>C have different crystal structures, respectively. Through the mentioned comprehensive analysis, we observed that the CTO PUF devices annealed at 800 <sup>o</sup>C provide increased grain boundaries compared to that of the same CTO annealed at 650 <sup>o</sup>C. By measuring total 214 PUF devices, we also found that the current values were dispersed randomly at 800 <sup>o</sup>C annealed device. Based on the CTO morphological control, the algorithm based on generative adversarial networks (GAN) is used and we evaluated the estimation component randomness and inter hamming distance. As a result, the less grain boundary device was analyzed to have the lop-sided statistics value which cannot operate on the security device. The randomness and inter-hamming distance were 4.16 % and 8 %, respectively. On the other hand, it is investigated that having lots of grain boundaries device has a random value which can form the Gaussian distribution. The randomness and inter-hamming distance were measured to 49.53 % and 46.55 % at 800 <sup>o</sup>C annealed device. Therefore, we suggest the security device by the simple sol-gel process, having the random current value due to the control of grain boundaries.

Keywords

grain boundaries | oxide

Symposium Organizers

Ying-Hao Chu, National Tsing Hua University
Catherine Dubourdieu, Helmholtz-Zentrum Berlin / Freie Universität Berlin
Olga Ovchinnikova, Oak Ridge National Laboratory
Bhagwati Prasad, Indian Institute of Science

Symposium Support

Bronze
CRYOGENIC LIMITED

Session Chairs

Ying-Hao Chu
Bhagwati Prasad

In this Session

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EQ09.09.03
Understanding the Correlations Between Structure, Electronic Properties and Oxygen Vacancy Migration in Samarium Nickelates

EQ09.09.04
Effect of ZrO2 Seed Layer in Hf0.5Zr0.5O2 Ferroelectric Device Fabricated by PEALD

EQ09.09.05
Novel Phase Formation and Magnetism at the Sb2Te3/Ni80Fe20 Interface

EQ09.09.06
Crystal Structure and Electric Properties of (100) Ba(ZrxTi1-x)O3 Thin Films on MgO Substrates by Pulse Laser Deposition Technique

EQ09.09.08
Stabilization of Various Polymorph in Multiferroic ScFeO3 Film

EQ09.09.09
Effect of Synthesis Condition on the Piezoelectric and Conductive Properties in BaTiO3 Ceramics

EQ09.09.11
Invertible Boolean Logic Gates by Probabilistic Computing Based on the CuxTe1-x/HfO2/Pt Threshold Switch

EQ09.09.12
Fabrication of Three-Dimensional Vertical Resistive Random Access Memory and Its Interference Phenomenon Induced by Lateral Charge Spreading

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