MRS Meetings and Events

 

EQ09.09.17 2022 MRS Fall Meeting

Organic Charge Modulated Field–Effect Transistor-Based Pressure Sensor Operated by Electrospun Piezoelectric Polymer

When and Where

Nov 30, 2022
8:00pm - 10:00pm

Hynes, Level 1, Hall A

Presenter

Co-Author(s)

Taehoon Hwang1,Jungyoon Seo1,Hwasung Lee1

Hanyang University1

Abstract

Taehoon Hwang1,Jungyoon Seo1,Hwasung Lee1

Hanyang University1
Organic Field Effect Transistor (OFET) was a basic electronic device, and due to its high structure and signal amplification effect, it was receiving high attention for the development of pressure and chemical sensors and its application potential in the field of wearable electronics. However, in the case of an OFET-based sensor, since an active layer that could detect a signal is formed on top of the source/drain or gate electrode and works, the basic component of the device was damaged by external stimuli, and finally the stability of the unit device, There were issues with performance and reliability degradation. Organic Charge Modulated FET (OCMFET) had a characteristic where the voltage applied to the control gate was induced through an insulator and a operating voltage was applied to the floating gate, and depending on the voltage applied to the control gate, it was possible to control the carrier required to operate the element. Also, by configuring the sensing area in the extended floating gate, it could be applied as a sensor and operation of the element without damaging the components of the FET, so it was advantageous in terms of securing the stability of the element. In this study, an OCMFET was fabricated using Dinaphtho[2,3-b:2′,3′-f ]thieno[3,2-b]-thiophene (DNTT) organic semiconductor and anodized AlOx dielectric, and pressure sensor was fabricated by applying electrospun PVDF-TrFE-elastomeric template with piezoelectric properties to floating gate. The PVDF-TrFE mat fabricated using electrospinning induced the alignment of b-crystals in the polymer by the applied voltage and the strong elongation force applied therewith, so it had high piezoelectric performance without the poling process. In addition, the template was fabricated by impregnating PDMS to impart elastomeric properties to PVDF-TrFE mat. The OCMFET-based pressure sensor developed through this study exhibits stable FET performance, so it can be applied to various wearable sensor fields such as human motion monitoring, biomedical, and artistic intelligence in the future.

Symposium Organizers

Ying-Hao Chu, National Tsing Hua University
Catherine Dubourdieu, Helmholtz-Zentrum Berlin / Freie Universität Berlin
Olga Ovchinnikova, Oak Ridge National Laboratory
Bhagwati Prasad, Indian Institute of Science

Symposium Support

Bronze
CRYOGENIC LIMITED

Session Chairs

Ying-Hao Chu
Bhagwati Prasad

In this Session

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EQ09.09.02
High-Performance UV Photodetectors Using Oriented WO3 Thin Films Grown at Low Temperature in Open Atmosphere

EQ09.09.03
Understanding the Correlations Between Structure, Electronic Properties and Oxygen Vacancy Migration in Samarium Nickelates

EQ09.09.04
Effect of ZrO2 Seed Layer in Hf0.5Zr0.5O2 Ferroelectric Device Fabricated by PEALD

EQ09.09.05
Novel Phase Formation and Magnetism at the Sb2Te3/Ni80Fe20 Interface

EQ09.09.06
Crystal Structure and Electric Properties of (100) Ba(ZrxTi1-x)O3 Thin Films on MgO Substrates by Pulse Laser Deposition Technique

EQ09.09.08
Stabilization of Various Polymorph in Multiferroic ScFeO3 Film

EQ09.09.09
Effect of Synthesis Condition on the Piezoelectric and Conductive Properties in BaTiO3 Ceramics

EQ09.09.11
Invertible Boolean Logic Gates by Probabilistic Computing Based on the CuxTe1-x/HfO2/Pt Threshold Switch

EQ09.09.12
Fabrication of Three-Dimensional Vertical Resistive Random Access Memory and Its Interference Phenomenon Induced by Lateral Charge Spreading

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