MRS Meetings and Events

 

EQ09.09.23 2022 MRS Fall Meeting

Spin-Polarized Flexoelectricity

When and Where

Nov 30, 2022
8:00pm - 10:00pm

Hynes, Level 1, Hall A

Presenter

Co-Author(s)

John Cavin1,James Rondinelli1

Northwestern University1

Abstract

John Cavin1,James Rondinelli1

Northwestern University1
Flexoelectricity describes the coupling between electric polarization and a strain gradient. Because it is represented by an even parity rank-4 tensor, it is not prohibited by the presence of inversion symmetry in a crystal in the same way as piezoelectricity. First-principles methods for calculating flexoelectric tensor components have been developed that involve calculating electronic and lattice contributions using various charge-moment and force tensors.<sup>1</sup> In magnetic materials, these charge moments can be spin-polarized – that is, the densities of spin up and down electrons can respond differently to atomic displacement. Based on this principle, we developed a method for calculating spin-polarized flexoelectric tensor components. The existence of spin-polarization in the flexoelectric tensor could be used to create spin-polarized channels of surface charge. We apply our technique to several rock-salt materials with various magnetic orderings to calculate spin-polarized flexoelectric tensor components. We outline a method for experimental confirmation of our work by calculating effective spin-polarized flexoelectric coefficients for particular cases of beam-bending. This work predicts a novel method for developing spin-channels which may be of use in spintronics.<br/>Acknowledgements: This work was sponsored in part by the National Science Foundation through CBET-1729787 and by the Department of Navy, Office of Naval Research, under ONR Award number N00014-16-1-2280. The US Government has a royalty-free license throughout the world on all copyrightable material contained herein.<br/>1. Hong, J. and D. Vanderbilt, <i>First-principles theory and calculation of flexoelectricity.</i> Physical Review B, 2013. <b>88</b>(17): p. 174107.

Keywords

oxide

Symposium Organizers

Ying-Hao Chu, National Tsing Hua University
Catherine Dubourdieu, Helmholtz-Zentrum Berlin / Freie Universität Berlin
Olga Ovchinnikova, Oak Ridge National Laboratory
Bhagwati Prasad, Indian Institute of Science

Symposium Support

Bronze
CRYOGENIC LIMITED

Session Chairs

Ying-Hao Chu
Bhagwati Prasad

In this Session

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High-Performance UV Photodetectors Using Oriented WO3 Thin Films Grown at Low Temperature in Open Atmosphere

EQ09.09.03
Understanding the Correlations Between Structure, Electronic Properties and Oxygen Vacancy Migration in Samarium Nickelates

EQ09.09.04
Effect of ZrO2 Seed Layer in Hf0.5Zr0.5O2 Ferroelectric Device Fabricated by PEALD

EQ09.09.05
Novel Phase Formation and Magnetism at the Sb2Te3/Ni80Fe20 Interface

EQ09.09.06
Crystal Structure and Electric Properties of (100) Ba(ZrxTi1-x)O3 Thin Films on MgO Substrates by Pulse Laser Deposition Technique

EQ09.09.08
Stabilization of Various Polymorph in Multiferroic ScFeO3 Film

EQ09.09.09
Effect of Synthesis Condition on the Piezoelectric and Conductive Properties in BaTiO3 Ceramics

EQ09.09.11
Invertible Boolean Logic Gates by Probabilistic Computing Based on the CuxTe1-x/HfO2/Pt Threshold Switch

EQ09.09.12
Fabrication of Three-Dimensional Vertical Resistive Random Access Memory and Its Interference Phenomenon Induced by Lateral Charge Spreading

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