MRS Meetings and Events

 

EQ09.09.09 2022 MRS Fall Meeting

Effect of Synthesis Condition on the Piezoelectric and Conductive Properties in BaTiO3 Ceramics

When and Where

Nov 30, 2022
8:00pm - 10:00pm

Hynes, Level 1, Hall A

Presenter

Co-Author(s)

Eunjin Koh1,Seunghun Kang1,Choongseop Jeon2,Seungyong Lee2,Jinbok Shin2,Jeongryeol Kim2,Jungwon Lee2,Donghoon Kim1,Yunseok Kim1

Sungkyunkwan university1,Samsung Electro-Mechanics Co., Ltd2

Abstract

Eunjin Koh1,Seunghun Kang1,Choongseop Jeon2,Seungyong Lee2,Jinbok Shin2,Jeongryeol Kim2,Jungwon Lee2,Donghoon Kim1,Yunseok Kim1

Sungkyunkwan university1,Samsung Electro-Mechanics Co., Ltd2
Ferroelectric materials have been studied in various fields because of their unique properties, such as spontaneous polarization that can be switched by an electric field. In particular, barium titanate (BaTiO<sub>3</sub>), which is a lead-free ferroelectric with a high dielectric constant, has been actively studied for applications in electronic devices, including energy storage applications and capacitor applications. Since electric devices have become miniaturized, the need to develop BaTiO<sub>3</sub> with smaller particle sizes and higher capacitance has been increasing. Although chemical modifications such as dopants, accomplished making BaTiO<sub>3</sub> smaller with high capacitance, there was a limitation in that macro-scale analysis techniques, which are not adequate for investigation of the nano-scale properties and mechanisms, have been mainly used. Consequently, to overcome this limitation, it is necessary to use a micro-scale characterization method to analyze the nano-sized particles. In this study, we employ piezoresponse force microscopy (PFM) and conductive atomic force microscopy (CAFM) to study BaTiO<sub>3</sub> ceramics according to the synthesis conditions of sintering temperatures, dopant species (Dy, Mn), and doping methods (oxide, poly). The investigation using PFM and CAFM reveals that the relative piezoresponse and leakage current depend on the sintering temperatures and dopant species. The uniformity of piezoresponse represents the dispersion of dopants which is different from doping methods. Furthermore, topography images revealed that particle size varied with the sintering temperatures, which is related to the dielectric constant. We explored the synthesis conditions that affect the piezoelectric properties and conductive properties of the BaTiO<sub>3</sub> ceramics using atomic force microscopy(AFM). Therefore, our findings can provide an understanding of the effect of the synthesis conditions on BaTiO<sub>3</sub> at a local level.

Keywords

ceramic | scanning probe microscopy (SPM)

Symposium Organizers

Ying-Hao Chu, National Tsing Hua University
Catherine Dubourdieu, Helmholtz-Zentrum Berlin / Freie Universität Berlin
Olga Ovchinnikova, Oak Ridge National Laboratory
Bhagwati Prasad, Indian Institute of Science

Symposium Support

Bronze
CRYOGENIC LIMITED

Session Chairs

Ying-Hao Chu
Bhagwati Prasad

In this Session

EQ09.09.01
Energy-Efficient Time Series Data Processing Using HfO2-Based 2Memristor-1Capacitor Integrated Temporal Kernel

EQ09.09.02
High-Performance UV Photodetectors Using Oriented WO3 Thin Films Grown at Low Temperature in Open Atmosphere

EQ09.09.03
Understanding the Correlations Between Structure, Electronic Properties and Oxygen Vacancy Migration in Samarium Nickelates

EQ09.09.04
Effect of ZrO2 Seed Layer in Hf0.5Zr0.5O2 Ferroelectric Device Fabricated by PEALD

EQ09.09.05
Novel Phase Formation and Magnetism at the Sb2Te3/Ni80Fe20 Interface

EQ09.09.06
Crystal Structure and Electric Properties of (100) Ba(ZrxTi1-x)O3 Thin Films on MgO Substrates by Pulse Laser Deposition Technique

EQ09.09.08
Stabilization of Various Polymorph in Multiferroic ScFeO3 Film

EQ09.09.09
Effect of Synthesis Condition on the Piezoelectric and Conductive Properties in BaTiO3 Ceramics

EQ09.09.11
Invertible Boolean Logic Gates by Probabilistic Computing Based on the CuxTe1-x/HfO2/Pt Threshold Switch

EQ09.09.12
Fabrication of Three-Dimensional Vertical Resistive Random Access Memory and Its Interference Phenomenon Induced by Lateral Charge Spreading

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