MRS Meetings and Events

 

EL05.08.06 2024 MRS Spring Meeting

Hydrogenated Borophene-Graphene Broadband Photodetectors for Ultrahigh Photoresponsivity

When and Where

Apr 24, 2024
5:00pm - 7:00pm

Flex Hall C, Level 2, Summit

Presenter

Co-Author(s)

Digvijay Tomar1,Surojit Chattopadhyay1

National Yang Ming Chiao Tung University1

Abstract

Digvijay Tomar1,Surojit Chattopadhyay1

National Yang Ming Chiao Tung University1
2D nanomaterials like graphene, hexagonal boron nitride (h-BN), black phosphorous (BP), and transition metal dichalcogenides (TMDs) have gained significant attention in the past two decades due to their distinct thermal, electrical, optical, and magnetic properties compared to their bulk counterparts[1]. In contrast, borophene, a unique 2D nanomaterial composed entirely of boron atoms, stands out for its advantages in optoelectronic device applications. These include high electrical conductivity, optical transparency in the visible spectrum, strong light-matter interaction, notable mechanical properties (high tensile strength and flexibility), the potential for superconductivity, and good chemical stability, making it suitable for harsh environments[2]. Here, we synthesized hydrogenated borophene through the thermal decomposition of NaBH<sub>4</sub> in the presence of H<sub>2</sub>. Subsequently, we fabricated a 2-terminal coplanar Borophene/Graphene/SiO<sub>2</sub>/Si broadband (405-1064 nm) photodetector (PD) with high photoresponsivity (R). The Borophene/Graphene/SiO<sub>2</sub>/Si PD exhibits an outstanding R~ 3.65 x 10<sup>3</sup> A/W under 405 nm laser illumination (@1V bias, 0.05 mW/cm<sup>2</sup>). This performance surpasses previously reported values for Borophene-based PDs, which ranged from 0.48 to 9.13 A/W [3-5]. Our PD shows short response, and recovery times of 82, and 83 ms under 633 nm laser illumination compared to previous reports in the range of 110 to 660 ms [3-5]. Our results may stir interest in Borophene for nanophotonics, and optoelectronics devices.<br/>References<br/>[1] G. Wang et al., "Two dimensional materials based photodetectors," Infrared Physics & Technology, vol. 88, pp. 149-173, 2018/01/01/ 2018, doi: https://doi.org/10.1016/j.infrared.2017.11.009.<br/>[2] Z. Xie et al., "Two-Dimensional Borophene: Properties, Fabrication, and Promising Applications," Research, vol. 2020, doi: 10.34133/2020/2624617.<br/>[3] Y. Liu, G. Tai, C. Hou, Z. Wu, and X. Liang, "Chemical Vapor Deposition Growth of Few-Layer β12-Borophane on Copper Foils toward Broadband Photodetection," ACS Applied Materials & Interfaces, vol. 15, no. 11, pp. 14566-14574, 2023/03/22 2023, doi: 10.1021/acsami.2c23234.<br/>[4] Z. Wu et al., "van der Waals Epitaxial Growth of Borophene on a Mica Substrate toward a High-Performance Photodetector," ACS Applied Materials & Interfaces, vol. 13, no. 27, pp. 31808-31815, 2021/07/14 2021, doi: 10.1021/acsami.1c03146.<br/>[5] Z. Wu et al., "Epitaxial growth of borophene on graphene surface towards efficient and broadband photodetector," Nano Research, 2023/09/27 2023, doi: 10.1007/s12274-023-6109-9.

Keywords

2D materials | graphene

Symposium Organizers

Silvija Gradecak, National University of Singapore
Lain-Jong Li, The University of Hong Kong
Iuliana Radu, TSMC Taiwan
John Sudijono, Applied Materials, Inc.

Symposium Support

Gold
Applied Materials

Session Chairs

Silvija Gradecak
Iuliana Radu

In this Session

EL05.08.03
Synthesis of 2D Intercalated Misfit Layered CoO Nanosheets from Quasi 1-D Ca Co O for Energy
Storage Applications

EL05.08.04
Content Addressable Memories and Transformable Logic Circuits Based on Ferroelectric Reconfigurable Transistors for In-Memory Computing

EL05.08.05
Heterojunctions of 2D Materials for Molecular Electronics

EL05.08.06
Hydrogenated Borophene-Graphene Broadband Photodetectors for Ultrahigh Photoresponsivity

EL05.08.07
Enhancing Gas Sensing Performance with 2D Material-Integrated Sub-Wavelength Grating Micro-Ring Resonator: Improved Sensitivity and Selective Detection

EL05.08.09
Controllable Growth of Large Area P-Type MoS2 with Transition Metal Doping using Confined Space CVD

EL05.08.10
Integrated TEM Membrane Platforms for Lateral Conversion TMD Synthesis

EL05.08.11
Chemical Vapor Transport Growth of Selenene and its Heterostructures with TMDs

EL05.08.13
Complementary 2D Tunnel FETs with Extremely Asymmetric Dual-Barrier Heterostructures

EL05.08.14
Synthesis and Atomic-Scale Investigation of Phosphorus-Doped Graphene on Copper

View More »

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