Oscar Chavez1,Jerome Brown1,Owen Hudak1,Li Gao1
California State University, Northridge1
Oscar Chavez1,Jerome Brown1,Owen Hudak1,Li Gao1
California State University, Northridge1
Phosphorus doped graphene has potential applications in supercapacitors, lithium ion batteries, fuel cells, and sensors. A phosphorus-containing sole precursor has been used for the synthesis of phosphorus-doped graphene on the Cu(111) surface. The surface morphology, electronic structure of phosphorus dopants, and doping-induced variation of local work function of graphene have been studied on the atomic scale by using scanning tunneling microscopy, dI/dV spectroscopy and dZ/dV spectroscopy. Bias-dependent atomic-resolution STM images of the predominant type of phosphorus dopants have been obtained. dI/dV spectra show the effect of phosphorus doping on the electronic structure of the graphene surface. dZ/dV spectra show that the local work function decreases at the phosphorus dopant site, leading to a downward energy shift of field emission resonances. X-ray photoelectron spectroscopy measurements are also performed to characterize the overall phosphorus doping properties on the sample surface. This work provides atomic-scale experimental insights into the phosphorus dopants in graphene for the first time.