Dhananjay Kumbhar1,Navaj Mullani1,Jun Hong Park1
Gyeongsang National University1
Dhananjay Kumbhar1,Navaj Mullani1,Jun Hong Park1
Gyeongsang National University1
The memristor is a top-notch choice for neuromorphic computing and nonvolatile memory, with potential for neuromorphic devices including high data integration density, ultrafast speed, and ultralow power consumption. Recently developed fast and energy-efficient artificial neuromorphic systems are in great need of low-power memristors, as previously described device amplitude is considerably greater than in the biological counterpart. Here we demonstrated an Opto-induced filament-based memristor using Sb<sub>2</sub>S<sub>3</sub> by a novel vapor transfer deposition method for the memory applications, demonstrating excellent parameters such as a super low turn ON potential of ≈ 9 mV and a switching speed as high as 600ns, including high retention and high endurance with ON/OFF ratio of 0.3x10<sup>3</sup>. The ultralow-power and high-speed switching of Sb<sub>2</sub>S<sub>3</sub> are associated with the lower activation energy for Ag ion migration and the presence of Sulphur vacancies. Therefore, the present optically configurable Sb<sub>2</sub>S<sub>3 </sub>memristors can provide a milestone to develop a single-chip-based bio-inspired computing system, converging with sensory functions.