Electro-Opto-Coupled Phenomenon in Mott-Material Towards Energy Efficient and Ultrafast Neuromorphic Processing

Functional quantum materials have the potential to generate new paradigms for programmable nanoelectronics, data processing, and even beyond. This can be accomplished through the downsizing of device sizes and the improvement of energy efficiency. Consequently, unlike conventional electronics, the fabrication of a novel technology that combines precisely regulated charge transfer and multilevel memory storage in a single nanoscale device requires the use of basic electronics.<br/>In this talk, I will discuss how spatially confined (nano-to-micrometer) vanadium oxide (VO₂) nanochannels designed by local probe lithography enable a wide variety of nanoelectronics in a single device, including regulated current conductors (on/off ratio &gt; 10⁴), ultrafast (~32 ns) volatile switches, and multilevel (&gt; 6) nonvolatile memory storage. In addition, probabilistic adaptation and classification of input patterns using multiterminal nanodevices combined on a single platform to take advantage of the in-material probabilistic computing made possible by the IMT’s stochastic yet controllable nature will be shown.<br/>Further, I will discuss the monolithic integration of the Mott material on photosensitive silicon and demonstrate the superlinear photoresponse (exponent &gt;18) with an ultralow dark current of 4.46 pA and how it can be implemented for intensity-selective near-sensor night vision processing even with noisy inputs. The results shown in this talk reveal a conceptually new kind of programable nonvolatile nanoelectronics and will pave the way for the creation of high-performance photodetectors with potential uses, such as in night vision, pattern recognition, and neuromorphic processing.