MRS Meetings and Events

 

CH01.08.36 2023 MRS Fall Meeting

Hysteresis and Transient Behaviour in Current Voltage Measurements of Antimony Selenide Solar Cells

When and Where

Nov 28, 2023
8:00pm - 10:00pm

Hynes, Level 1, Hall A

Presenter

Co-Author(s)

Punchirala Arachchige Udari Imalka Wijesinghe1,Oliver Hutter1

Northumbria University1

Abstract

Punchirala Arachchige Udari Imalka Wijesinghe1,Oliver Hutter1

Northumbria University1
Antimony selenide (Sb<sub>2</sub>Se<sub>3</sub>) is an attractive light-absorber used in low-cost, non-toxic, earth-abundant thin-film solar cells with rapidly rising efficiency values. Currently, many n-type metal oxides have been investigated as buffer layers in Sb<sub>2</sub>Se<sub>3</sub> solar cell architectures. Among them, titanium oxide (TiO<sub>2</sub>) is commonly used as the buffer layer because of its significant optoelectrical properties. The current density−voltage measurement of Sb<sub>2</sub>Se<sub>3 </sub>solar cells in FTO/TiO<sub>2</sub>/Sb<sub>2</sub>Se<sub>3</sub>/P3HT/Au configuration shows a hysteresis-like distortion that depends on the voltage scan direction, scan rate, scan range, and voltage bias conditions prior to measurement. The presence of hysteresis can significantly influence the photovoltaic properties of devices, which can overestimate or underestimate the accurate power conversion efficiency of solar cells. The fabricated solar cells showed a normal hysteresis where the forward scan result exhibits lower performance than the reverse scan under certain circumstances. We identify this phenomenon is caused due to charge carrier accumulation which may be because the capacitive charge is quickly discharged through charge separation. In addition, the accumulation of oxygen vacancies at the TiO<sub>2</sub>/Sb<sub>2</sub>Se<sub>3</sub> interface can reduce charge extraction, and at the same time, significantly accelerate the charge recombination at the interface, which also leads to unfavorable hysteresis. However, the hysteretic effects are not observed in devices utilizing alternative buffer layers like ZnO and SnO<sub>2</sub>, suggesting that the buffer absorber interfaces have a significant effect on transients in Sb<sub>2</sub>Se<sub>3</sub> absorber devices. Therefore, further improvements of Sb<sub>2</sub>Se<sub>3 </sub>solar cells are essential through careful surface engineering of existing TiO<sub>2</sub> or through a judicious choice of alternative interfacial layers.

Keywords

physical vapor deposition (PVD) | thin film

Symposium Organizers

Liam Collins, Oak Ridge National Laboratory
Rajiv Giridharagopal, University of Washington
Philippe Leclere, University of Mons
Thuc-Quyen Nguyen, University of California, Santa Barbara

Symposium Support

Silver
Bruker
Digital Surf

Session Chairs

Liam Collins
Rajiv Giridharagopal
Philippe Leclere

In this Session

CH01.08.01
First-Principles ELNES Simulation of P-O Based Materials

CH01.08.02
Ion Insertion and Transport in Between the MXene Layers: Control the Charging Mechanism

CH01.08.04
High-Performance Oxide Thin-Film Transistors based on Indium with Nano-Iaminate Structure using Plasma-Enhanced Atomic Layer Deposition

CH01.08.05
Nanographenes with Fully-Substituted Group 7A Elements: The Chemistry in Lithium-ion Battery Anodes

CH01.08.06
0.01 to 0.5 Sun is a Realistic and Alternative Irradiance Window to Analyze Urban Outdoor Photovoltaic Cells

CH01.08.07
Functional Separator Enabling Improved Cycling Performance of Lithium Metal Batteries

CH01.08.08
Understanding the Relationship between Separator Parameters and Characteristics of Practical Lithium Metal Batteries

CH01.08.09
On the Electro-Mechanical Property Characterization of Piezoelectric Inorganic and Hybrid Materials for Energy Harvesting Systems

CH01.08.10
Understanding the Role of Lithium Borate as the Surface Coating on High Voltage Single Crystal LiNi0.5Mn1.5O4

CH01.08.11
Structural-Plasmonic Relationship of Crystalline Copper Oxide Microcubes Decorated with Plasmonic Gold Nanoparticles

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