MRS Meetings and Events

 

EL06.03.07 2024 MRS Spring Meeting

Quantifying Oxygen Diffusion Rates at The Nanoscale in Epitaxial SrTiO3 Films

When and Where

Apr 23, 2024
5:00pm - 7:00pm

Flex Hall C, Level 2, Summit

Presenter

Co-Author(s)

Keon Sahebkar1,Nathan Ardnt1,Sihang Hui1,Brooke Lastinger1,Morgan Congdon1,Ryan Need1

University of Florida1

Abstract

Keon Sahebkar1,Nathan Ardnt1,Sihang Hui1,Brooke Lastinger1,Morgan Congdon1,Ryan Need1

University of Florida1
Oxygen ion migration is an increasingly viable route to control electronic and magnetic phase transitions in nanoscale oxide thin films and harness those phase transitions for next-generation, energy-efficient electronics [1]. Nanoscale oxygen migration is central to the operation of promising emerging information technologies like resistive random-access memory and magnetoionic memory [2,3]. Heterostructure design elements like strain, interface symmetry, and layer stacking can all control the ion diffusion rates and energy barriers that underpin the operation of these devices. However, due to the difficulty of measuring small concentrations of oxygen ions (~1 at%) moving nanoscale distances, we do not have a framework for how these heterostructure design elements can be tuned to improve and optimize device functionality. This project aims to address this by developing a methodology to quantitatively determine oxygen diffusion rates and migration energy barriers in nanoscale thin films using reflectometry techniques.<br/><br/>Nanoscale “oxide diffusion couples” are fabricated from epitaxially grown SrTiO<sub>3</sub> (STO) and a sputtered metal cap, then annealed in vacuum to drive oxygen from the epitaxial oxide layer into the metal. X-ray reflectometry (XRR) scans are taken before and after vacuum annealing and used to establish an oxygen concentration depth profile from changes to the interface roughness between the STO and metal layers. These concentration profiles are then fit to known diffusion couple solutions to Fick’s Second Law and used to calculate an oxygen diffusion coefficient for each annealing study [4]. This poster will further explain our proposed methodology and preliminary results.<br/><br/><b>References</b><br/>[1] F. Gunkel, et al., <i>Appl. Phys. Lett.</i> 116 (2020) 120505<br/>[2] F. Zahoor, et al., <i>Nanoscale Res. Lett.</i> 15 (2020) 90<br/>[3] M. Nichterwitz, et al.,<i> APL Mater.</i> 9 (2021) 030903<br/>[4] S. Brennan, et al. <i>Metall. Mater. Trans. A</i>, 43 (2012) 4043

Keywords

diffusion | thin film | x-ray reflectivity

Symposium Organizers

Aiping Chen, Los Alamos National Laboratory
Woo Seok Choi, Sungkyunkwan University
Marta Gibert, Technische Universität Wien
Megan Holtz, Colorado School of Mines

Symposium Support

Silver
Korea Vacuum Tech, Ltd.

Bronze
Center for Integrated Nanotechnologies, Los Alamos National Laboratory
Radiant Technologies, Inc.

Publishing Alliance

MRS publishes with Springer Nature