Yevgen Syryanyy1,2,Iraida Demchenko1,Asiyeh Shokri1,Yevgen Melikhov3,Maryna Chernyshova1
Institute of Plasma Physics and Laser Microfusion1,Warsaw University of Technology, Faculty of Electronics and Information Technology2,Institute of Fundamental Technological Research Polish Academy of Sciences3
Yevgen Syryanyy1,2,Iraida Demchenko1,Asiyeh Shokri1,Yevgen Melikhov3,Maryna Chernyshova1
Institute of Plasma Physics and Laser Microfusion1,Warsaw University of Technology, Faculty of Electronics and Information Technology2,Institute of Fundamental Technological Research Polish Academy of Sciences3
Ga<sub>2</sub>O<sub>3</sub> can become a powerful substitute for GaN in the power electronics industry in devices, such as MOSFETs and others [1-2]. Together with ion implantation, which is a versatile fabrication technique widely adopted in the mass production of commercial semiconductors, the fabrication of all-ion-implanted vertical gallium oxide transistor could greatly enhance the prospects for Ga<sub>2</sub>O<sub>3</sub>-based power electronics. For the realization of such systems, ion implantation can be used for channel/contact region doping and device isolation if necessary [3]. The important limitation of implantation is the buildup of lattice disorder due to the ballistic character of this process. Consequently, there is strong motivation to study the defects formation and their transformations. The ion implantation effects in compound crystals, e.g. GaN and ZnO, have been extensively studied in the last decade [4]. In the case of Ga<sub>2</sub>O<sub>3</sub> however, the mechanism of defect buildup is completely unknown. The main problem comes from the fact that the accumulation of defects and their transformations in ion implanted compound crystals is a complicated multistep process resulting in the formation of a mixture of different types of defects. It is important to identify the location of implanted ions in the bulk and thin film crystal lattice, their surroundings, interaction with the host matrix and with structural and native point defects. In addition, an important consideration for the viability of ion implantation in Ga<sub>2</sub>O<sub>3</sub> is the rate of diffusion of the different impurities.<br/>In this work, we study the effect of inserting Si/N atoms into β-Ga<sub>2</sub>O<sub>3</sub> utilizing ion implantation to a heated substrate. This process of material formation offers an interesting and complex field of study, with plenty of intrinsic defects, as well as their formation into defect complexes with the implanted ion. Such complexity requires the use of a variety of complementary analytical methods in order to perform a quantitative analysis. Here, we report the results of many analytical techniques, such as Rutherford Backscattering Spectrometry, Particle Induce X-ray Emission, High-resolution X-Ray Diffraction, Raman spectroscopy, Transmission Electron Microscopy, as well as synchrotron radiation-based technique as X-Ray Absorption Near Edge Structure supported by Density Functional Theory. All of this allows us to create a novel approach to study Ga<sub>2</sub>O<sub>3</sub> implanted by Si/N ions.<br/><b>Acknowledgements:</b> The work was partially supported by the Interdisciplinary Centre for Mathematical and Computational Modelling at University of Warsaw, Poland, grant ID 3557. These studies were financially supported from the project UMO-2020/39/B/ST5/03580 founded by the National Science Centre in Poland.<br/><br/>[1] S.J. Pearton et al., Appl. Phys. Rev. 5 (2018) 011301.<br/>[2] M. Higashiwaki et al., Appl. Phys. Lett. 112 (2018) 060401.<br/>[3] M.H. Wong et al., IEEE Electron Device Letters 40 (2019).<br/>[4] A. Turos et al., Acta Materialia 134, (2017) 249.