Clara Jackson1,Kedar Johnson2,Elycia Wright1,Selena Coye1,Indika Matara Kankanamge1,Michael Williams1
Clark Atlanta University1,Morehouse College2
Clara Jackson1,Kedar Johnson2,Elycia Wright1,Selena Coye1,Indika Matara Kankanamge1,Michael Williams1
Clark Atlanta University1,Morehouse College2
Vanadium disulfide (VS<sub>2</sub>) has grown popular for its potential applications in energy storage and renewable energy due to its thin layered structure, metallic conductivity, and ability to form highly crystalline structures. Our research focuses on investigating the impact of vanadium disulfide growth on various substrates, such as sapphire, silicon oxide on silicon (SiO<sub>2</sub>/Si), and gallium oxide (Ga<sub>2</sub>O<sub>3</sub>), using the chemical vapor deposition (CVD) technique. Furthermore, the research aims to identify the optimal growth parameters, including growth temperature, and carrier gas flow rate for each substrate to achieve a large coverage film. To achieve this, we use the carrier gases (Ar, Ar + H<sub>2</sub>) while implementing the growth temperatures of VS<sub>2</sub> during the sample growth. We will measure the resulting materials using spectroscopic probes like photoluminescence, Raman, Fourier transform infrared (FTIR), and confocal laser optical microscopy to examine the surface morphology, structural quality, absorption, and reflection of materials.