Young Jae Kang1,Changyup Park2,Ha-Jun Sung1,Donggeon Koo2,Jongbong Park1,Kiyeon Yang1,Yongnam Ham1,Minwoo Choi1,Bonwon Koo1,Wooyoung Yang1,Yongyoung Park1,Dongho Ahn2,Kwangmin Park2,Chang Seung Lee1
Samsung Advanced Institute of Technology, Samsung Electronics1,Semiconductor R&D Center, Samsung Electronics2
Young Jae Kang1,Changyup Park2,Ha-Jun Sung1,Donggeon Koo2,Jongbong Park1,Kiyeon Yang1,Yongnam Ham1,Minwoo Choi1,Bonwon Koo1,Wooyoung Yang1,Yongyoung Park1,Dongho Ahn2,Kwangmin Park2,Chang Seung Lee1
Samsung Advanced Institute of Technology, Samsung Electronics1,Semiconductor R&D Center, Samsung Electronics2
There is high demand for non-volatile memory technologies such as MRAM(magnetic random-access memory), PRAM(phase change random-access memory), RRAM(resistive random-access memory), thanks to high capacity and low power consumption.<sup>1 </sup>Among all non-volatile memories, 3D cross-point phase change memory demonstrates long time of data retention, scalable array architecture and low costs, which device consisting of OTS(Ovonic threshold switch) and phase change materials can be switched between amorphous and crystalline phase of chalcogenide.<sup>2,3</sup> Considerable research efforts have been focused on the reduction of switching current and endurance improvement in the next generation of 3D cross-point PRAM device. It can be imagined that phase change properties should be modified by introducing new dopants.<br/>With carbon doping, the reset current of GeSbTe can be reduced with increasing set resistance.<sup>4</sup> In this presentation, we will report the co-doping effects to improve switching current and reliability of GeSbTe. From the ab-initio calculations, we revealed that doped X element can decrease the number of Ge-Ge and Te-Te homopolar bonding. The X-dopant can suppress electron hopping sites, resulted in the set resistance increase of GeSbTe. From experimental works, we show co-substitution in GeSbTe can significantly reduce switching current (~38%) compared to carbon doped GeSbTe. Also, Carbon/X co-doped GeSbTe shows high cycling endurances of 10<sup>6</sup>. We found that Carbon/X doped GeSbTe should be promising candidate materials for a next generation of 3D-cross point PRAM device.<br/><br/>Reference<br/>1M. Si, H. Cheng, T. Ando, G. Hu, and P. D. Ye, MRS BULLETIN 46, 1 (2021).<br/>2.G. W. Burr, M. J. Breitwisch, M. Franceschini, D. Garetto, K. Gopalakrishnan, B. Jackson, B. Kurdi, C. Lam, L. A. Lastras, A. Padilla, B. Rajendran, S. Raoux, and R. S. Sheno, Journal of Vacuum Science & Technology B, 28, 223 (2010).<br/>3.A. L. Lacaita, A. Redaelli, Microelectronic Engineering 109, 351 (2013).<br/>4.J. H. Park, S.-W. Kim, J. H. Kim, Z. Wu, S. L. Cho, D. Ahn, D. H. Ahn, J. M. Lee, S. U. Nam, and D.-H. Ko, Journal of Applied Physics 117, 115703 (2015)