Haolei Hui1,Zhonghai Yu2,Chang Huai1,Thomas Hahn1,Sen Yang2,Hao Zeng1
University at Buffalo, The State University of New York1,Xi’an Jiao Tong University2
Haolei Hui1,Zhonghai Yu2,Chang Huai1,Thomas Hahn1,Sen Yang2,Hao Zeng1
University at Buffalo, The State University of New York1,Xi’an Jiao Tong University2
Chalcogenide perovskite is an emerging class of semiconductor materials with potential applications in electronics and optoelectronics. SrHfS<sub>3</sub> in the distorted perovskite structure is shown to be a direct gap semiconductor with strong green photoluminescence. Together with its high stability defect tolerance, it many find applications such as LEDs. In this work we report the synthesis of SrHfS<sub>3</sub> and SrZrS<sub>3</sub> thin films by magnetron sputtering using metal targets, followed by CS<sub>2</sub> sulfurization. Salts was used improve the film crystallinity. Sample growth on conductive substrates was also attempted, with an eye for device fabrications. Our work demonstrates a new way of fabricating SrHfS<sub>3</sub> and SrZrS<sub>3</sub> thin films with controllable composition.