Meng Hsuan Yang1,Wen Wei Wu1
National Yang Ming Chiao Tung University1
Meng Hsuan Yang1,Wen Wei Wu1
National Yang Ming Chiao Tung University1
Resistive memristors with high density and nonvolatile have the significant potential for long-term data storage and development of artificial neural computing. Among most filamentary-type resistive switching(RS) memories, conventional binary oxides (MO<sub>x</sub>) are extensively studied as RS materials in memristors.[1] However, there are few studies on ternary oxides and lack of stoichiometry information.<br/>In this study, we introduced novel material PbSnO<sub>3</sub>(PSO) as switching layer, which epitaxially grew on SrRuO<sub>3</sub> (SRO) bottom electrode and SrTiO<sub>3</sub> (STO) substrate. This work revealed the resistive switching mechanism by means of the formation nanochannel in the PbSnO<sub>x</sub> (PSO) matrix and the effect of oxygen deficiencies on its characteristics. High-resolution transmission electron microscope (TEM) was utilized to achieve a clear visualization of conducting path. Furthermore, the components and structures were analyzed by electron energy loss spectroscopy (EELS) and energy dispersive spectroscopy (EDS) equipped in TEM. PSO-based RS memory exhibited superior performance including high ON/OFF ratio, long data retention time, narrow distribution of switching voltage, and stable device-to-device uniformity, which provide great potentialities on the application of novel RRAM devices.