Study on Switching Voltage of Silver Telluride Nanoparticle-Based Resistive Random Access Memory

In this study, we report on the change of the switching voltage of a silver telluride nanoparticle-based resistive random access memory (RRAM) device in accordance with the annealing temperature. Solution-processed Ag/silver telluride/Au RRAM was fabricated using synthesized silver telluride NPs. According to the annealing temperature, the change in the properties of the silver telluride thin-film was observed, and the change in the electrical properties of the RRAM devices was also observed. The fabricated silver telluride-based RRAMs have complementary resistive switching characteristics regardless of the annealing temperature. However, it was confirmed that the reset switching voltage was decresed according to the change of the thin-film as the annealing temperature increased. The reset voltage of the device annealed at room temperature was ±3~4V, whereas reset voltage of the device annealed at 200°C decreased to ±1V. This change in switching voltage is due to the change in the crystallinity and surface morphology of the thin-film.