MRS Meetings and Events

 

MF01.03.07 2022 MRS Spring Meeting

Nanofabrication of an On-Chip Direct Write Evaporator for Scanning Near-Field 3D Deposition

When and Where

May 9, 2022
4:15pm - 4:30pm

Hawai'i Convention Center, Level 3, 319B

Presenter

Co-Author(s)

Xella Doi1,2,Pavani Vamsi Nittala1,2,Suryakant Mishra1,2,Linus Woodard1,2,Sanjoy Sarkar1,2,Kyaw Zin Latt2,Ralu Divan2,Supratik Guha1,2

The University of Chicago1,Argonne National Laboratory2

Abstract

Xella Doi1,2,Pavani Vamsi Nittala1,2,Suryakant Mishra1,2,Linus Woodard1,2,Sanjoy Sarkar1,2,Kyaw Zin Latt2,Ralu Divan2,Supratik Guha1,2

The University of Chicago1,Argonne National Laboratory2
In order to realize the next generation of electronic devices, it is desirable to be able to create nano and mesoscale dimensioned patterns in three dimensions with scalability, robustness, and ease of fabrication. Current lithography techniques are inherently two-dimensional in approach, and subtractive in nature (i.e. involving the blocking out patterns then removal or addition of material on a wafer). As a result many successive steps of lithography and wafer processing are necessary for creating three-dimensional heterostructures on a wafer and makes the technique non-ideal for future cheap, 3D integrated structures. Furthermore, many steps of wafer processing require the use of materials that will not be part of the final product, so a process that eliminates these intermediary steps will have the added benefit of reducing waste for sustainable manufacturing. Our research has involved the design and fabrication of a miniaturized on-chip physical or chemical vapor deposition system (henceforth called a Direct Write Evaporator, DWE) with nozzle dimensions in the nanoscale to mesoscale, to precisely deliver evaporant to a substrate’s surface. When the nozzle is small and close to the surface, it creates a localized deposition spot that can be moved around to directly write patterns. The direct write system is then completed by mounting the DWE onto a near field x-y-z scanning stage with nanometer scale “write” resolution.<br/>We have designed and developed a cleanroom based process flow which utilizes a series of plasma etch steps for the fabrication of the DWE using a silicon-on-insulator substrate as a starting material. The main components in this DWE are the nozzle and the reservoir. The DWE device is ~ 1 mm in overall dimensions and contains a nozzle of a few hundred nanometer diameter at the tip of a patterned annular needle that transports an evaporant from the reservoir to the substrate. The DWE is mounted on a 3-axis piezoelectric scanning stage and incorporated into a vacuum deposition chamber. In this presentation we will describe the fabrication of the DWEs, and show the results of our initial direct deposition/writing experiments at the nanoscale.

Keywords

additive manufacturing | reactive ion etching

Symposium Organizers

Fumiyoshi Tochikubo, Tokyo Metropolitan University
Jane Chang, University of California, Los Angeles
Masaharu Shiratani, Kyushu University
David Staack, Texas A&M University

Symposium Support

Bronze
The Japan Society of Applied Physics

Publishing Alliance

MRS publishes with Springer Nature