Norio Tokuda1,Kazuki Kobayashi1,Xufang Zhang1,Tsubasa Matsumoto1,Takao Inokuma1,Satoshi Yamasaki1,Hiromitsu Kato2,Masahiko Ogura2,Toshiharu Makino2,Daisuke Takeuchi2,Christoph Nebel1,3
Kanazawa Univ1,National Institute of Advanced Industrial Science and Technology2,Diamond and Carbon Applications3
Norio Tokuda1,Kazuki Kobayashi1,Xufang Zhang1,Tsubasa Matsumoto1,Takao Inokuma1,Satoshi Yamasaki1,Hiromitsu Kato2,Masahiko Ogura2,Toshiharu Makino2,Daisuke Takeuchi2,Christoph Nebel1,3
Kanazawa Univ1,National Institute of Advanced Industrial Science and Technology2,Diamond and Carbon Applications3
We reported the first operation of an inversion channel MOSFET using diamond semiconductor [1]. Here, we precisely controlled the MOS interface using an atomic layer deposition of Al<sub>2</sub>O<sub>3</sub> film on OH-terminated diamond (111) surface [2] and pn-junctions using selective growth of heavily B doped layers on n-type diamond body for the formation of source/drain. The field-effect mobility <i>μ</i><sub>FE</sub> of the p-channel diamond MOSFET was 8 cm<sup>2</sup>/Vs at the highest, which is much lower than the hole mobility of 6,300 cm<sup>2</sup>/Vs at RT [3]. Recently, we have investigated the interface state density <i>D</i><sub>it</sub> dependence of <i>μ</i><sub>FE</sub> in inversion channel diamond MOSFETs [4,5] and developed the process technologies for improving the inversion channel diamond MOSFETs [6-9]. We will report the progress in the inversion channel diamond MOSFETs.<br/>Acknowledgements<br/>This work was partially supported by MEXT-Program for Creation of Innovative Core Technology for Power Electronics Grant Number JPJ009777, Adaptable and Seamless Technology transfer Program through Target-driven R&D (A-STEP) from Japan Science and Technology Agency (JST) Grant Number JPMJTR20RA, Kanazawa University SAKIGAKE Project 2020, a NEDO Feasibility Study Program (Uncharted Territory Challenge 2050) grant number 19101600-0, JST FOREST Program (Grant Number JPMJFR20353078, Japan), and JSPS KAKENHI grant numbers JP18KK0383, JP20K14773, and JP21H01363.<br/>References<br/>[1] T. Matsumoto, N. Tokuda et al., Sci. Rep. 6 (2016) 31585.<br/>[2] R. Yoshida, N. Tokuda et al., Appl. Surf. Sci. 458 (2018) 222.<br/>[3] I. Akimoto, N. Naka, N. Tokuda, Diamond. Diamond Relat. Mater. 63 (2016) 38.<br/>[4] T. Matsumoto, N. Tokuda et al., Appl. Phys. Lett. 114 (2019) 242101.<br/>[5] X. Zhang, N. Tokuda et al., J. Mater. Res. DOI:10.1557/s43578-021-00317-z.<br/>[6] M. Nagai, N. Tokuda et al., Sci. Rep. 8 (2018) 6687.<br/>[7] M. Nagai, N. Tokuda et al., Diam. Relat. Mater. 103 (2020) 107713.<br/>[8] T. Tabakoya, N. Tokuda et al., Diam. Relat. Mater. 114 (2021) 108294.<br/>[9] K. Sakauchi, N. Tokuda et al., Diam. Relat. Mater. 116 (2021) 108390.