MRS Meetings and Events

 

NM01.12.23 2022 MRS Spring Meeting

Electrically Controllable Neuromodulation Emulated by 2D Weight-Tunable Memristor for Neuromorphic Application

When and Where

May 10, 2022
5:00pm - 7:00pm

Hawai'i Convention Center, Level 1, Kamehameha Exhibit Hall 2 & 3

Presenter

Co-Author(s)

Woong Huh1,SeongHoon Jang1,Jaepil So1,Jong Chan Kim2,Donghun Lee1,Yeon Ho Kim1,Hong-Gyu Park1,Hu Young Jeong2,Gunuk Wang1,Chul-Ho Lee1

Korea University1,Ulsan National Institute of Science and Technology2

Abstract

Woong Huh1,SeongHoon Jang1,Jaepil So1,Jong Chan Kim2,Donghun Lee1,Yeon Ho Kim1,Hong-Gyu Park1,Hu Young Jeong2,Gunuk Wang1,Chul-Ho Lee1

Korea University1,Ulsan National Institute of Science and Technology2
Two-dimensional (2D) semiconductors have emerged as a promising material for low-power and high-performance electronics because of the intrinsic atomic thickness and the exceptional properties maintaining even with ultimate scaling. Besides, the competitive ability to electrostatically control the electrochemical potential allows us to design band-modulated 2D heterostructures for implementing a variety of gate-tunable electronic devices. Such a unique capability of 2D materials can also offer great potential for realizing an energy-efficient artificial synapse with high controllability. Nevertheless, the artificial synapse utilizing functionally unique properties has rarely been demonstrated, as appropriate materials and structures with robust memristive switching characteristics and an adequately integrated device architecture are not available.<br/> Here, we report a functionally advanced artificial synaptic architecture, a three-terminal device consisting of a defect-controlled molybdenum disulfide (MoS<sub>2</sub>) memristor on hexagonal boron nitride (<i>h</i>-BN), termed as a ‘weight tunable memristor’. Through the precise defect control of MoS<sub>2</sub> channel, the device exhibits low power switching phenomena even without applying gate voltages, which cannot be implemented in previously reported memtransistors utilizing gate dielectric as a pre-synaptic component. One more step, owing to the electrostatically controlled space charge limited current in the ultrathin channel, the device exhibits gate-controlled memristive switching characteristics. The device can implement essential synaptic characteristics, such as short-term plasticity and long-term plasticity. Notably, by electrostatic tuning with a gate terminal, we can additionally regulate the degree and tuning rate of the synaptic weight independent of the programming impulses from source and drain terminals, with sub-1 FJ pulse input. Moreover, the changed states are within stable region for 1500 consecutive pulses. These capabilities eventually enable the accelerated consolidation and conversion of synaptic plasticity, functionally analogous to the synapse with an additional neuromodulator in biological neural networks. Furthermore, such acceleration improves the recognizing accuracy and reduces learning step in MNIST pattern recognition, with considerable power-saving benefits. Our demonstration represents an important step toward highly networked and energy-efficient neuromorphic electronics.

Symposium Organizers

Zakaria Al Balushi, University of California, Berkeley
Olga Kazakova, National Physical Laboratory
Su Ying Quek, National University of Singapore
Hyeon Jin Shin, Samsung Advanced Institute of Technology

Symposium Support

Bronze
Applied Physics Reviews | AIP Publishing
ATTOLIGHT AG
Penn State 2DCC-MIP

Session Chairs

Zakaria Al Balushi

In this Session

NM01.12.01
Multi-Level Generation Mechanism in Basic Floating Gate Memory Structure

NM01.12.03
Gas Barrier Properties of Chemical Vapor-Deposited Graphene to Oxygen Imparted with Sub-eV Kinetic Energy

NM01.12.04
Characterisation and Defect Analysis of 2D Layered Ternary Chalcogenides

NM01.12.05
Photoemission from Bialkali Photocathodes Through an Atomically Thin Protection Layer

NM01.12.07
Biaxial Strain Engineering of MoSe2/WSe2 Heterostructures

NM01.12.09
NaCl-Assisted Low-Temperature Growth of Few-Layer WSe2 by Pulsed Laser Deposition

NM01.12.10
Seebeck Domain Formed by Grain Boundaries of 1H-MoS2

NM01.12.11
High-Mobility Junction Field-Effect Transistor via Graphene/MoS2 Heterointerface

NM01.12.12
Covalent Functionalization of Carbophene Pores

NM01.12.13
Dynamically Structure-Evolved Ultrathin Layered Double Hydroxide Nanosheets for Highly Efficient 5-(hydroxymethyl)furfural Oxidation

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