Flexible Tellurium Nanowires and Tellurium Dual-Channel Field-Effect Phototransistor Array with High Linear Photoresponsivity

By introducing the method of uniformly synthesizing the tellurium nanowire (TeNWs) and the Tellurium hybrid structure to a flexible field effect transistor array, excellent electrical, mechanical and optical properties were achieved. All fabrication processes are carried out in a simple manner with low thermal budget (&lt; 100 °C). Scanning electron microscopy (SEM) and Raman spectroscopy are performed to compare the uniform hybrid channel structure with bare Te related film. The hybrid structure of TeNWs/Te-film FET showed high mobility of 5.35 cm²/Vs as with ~ 10⁴ <i>on/off</i> ratio, and all array devices have uniform electrical properties. Stability tests such as positive bias stress, negative bias stress, long term stability response, mechanical bending stress test can confirm the good reliability of the suggested device performance. High-performance phototransistor array is proved by verifying threshold voltage shift, response, sensitivity, photocurrent, and detectivity as the optical properties. It is expected that the stable operation and excellent optical properties of the flexible hybrid channel FET array can be attributed to enabling a wide range of applications in the next generation.