MRS Meetings and Events

 

NM06.08.30 2022 MRS Fall Meeting

Optimization of 2D Transition Metal Dichalcogenides Using Electronic Structure and Thermoelectric Coefficient Calculations

When and Where

Nov 30, 2022
8:00pm - 10:00pm

Hynes, Level 1, Hall A

Presenter

Co-Author(s)

Isaiah Chen1,Paulette Clancy1

Johns Hopkins University1

Abstract

Isaiah Chen1,Paulette Clancy1

Johns Hopkins University1
Transition metal dichalcogenides (TMDs) and doped layered compounds are emerging classes of two-dimensional (2D) materials with technological potential for their use in photovoltaic devices. These materials exhibit useful electronic, optical, and thermal properties with tunable direct bandgaps. However, there is a need to develop novel nanostructure design strategies to improve the thermoelectric performance and <i>p</i>-type characteristics of these materials. Computational materials design can assist in these efforts and accelerate materials development. To address this need, we have performed plane-wave density functional theory (DFT) calculations for a series of transition metal dichalcogenide thin films (MoTe<sub>2</sub>, WTe<sub>2</sub>) and bismuth-antimony alloys (BiSb, BiTe). In particular, we are focusing on TMDs that contain telluride, given their particular importance for device studies. We used DFT to focus on the tolerance of the properties of these materials to variations in polymorph, composition, and defect type. We have validated the DFT predictions against experimental and published computational work. We will also present the predictions of DFT-generated thermoelectric coefficients using the open-source BoltzTraP2 codebase, based on the Boltzmann transport equation. These coefficients include electrical conductivity, thermal conductivity, Seebeck coefficient, power factor, and figure of merit. We will show how variation of the band gap and density of states (DOS) in all structures will cover both semiconductors and metals with thermoelectric properties in the expected ranges of previous observations. Our goal is to use these calculated thermoelectric properties to gauge which materials are preferable for use in device fabrication and assist with optimizing the performance of these 2D materials. We will use a Bayesian optimization machine learning algorithm (Physical Analytics Pipeline) to search the large combinatorial space comprised of different compositional alloys and determine which combinations yield particularly noteworthy <i>p</i>-type characteristics.

Keywords

2D materials | thermoelectricity

Symposium Organizers

Nicholas Glavin, Air Force Research Laboratory
Aida Ebrahimi, The Pennsylvania State University
SungWoo Nam, University of California, Irvine
Won Il Park, Hanyang University

Symposium Support

Bronze
MilliporeSigma

Session Chairs

Nicholas Glavin
SungWoo Nam

In this Session

NM06.08.01
Graphene via Contact Architecture for Vertical Integration of vdW Heterostructure Devices

NM06.08.02
Wafer-Scale Growth of Ultra-Thin SnSex (x=1,2) by Low-Temperature MOCVD

NM06.08.03
Epitaxial Single-Crystal Growth of Transition Metal Dichalcogenide Monolayers via Atomic Sawtooth Au Surface

NM06.08.04
Synthesis of High-Quality, Large Violet Phosphorus Crystals by Mixed Metal Flux

NM06.08.05
Self-Wrinkling Insulating Nanosheets as Substrates for Wrinkling of Graphene, Graphene Oxide and Other 2D Materials

NM06.08.07
Multifunctional Nanosheets for Electromagnetic Interference Shielding and Infrared Detection

NM06.08.08
Ultrafast Carrier Dynamics In 2D GeS—Role of Valley Polarization

NM06.08.10
Single-Crystal WS2 Growth on High Miscut Angle Substrate

NM06.08.12
Superior Mechanical Properties of Multi-Layer Covalent-Organic-Frameworks Enabled by Rationally Tuning Molecular Interlayer Interactions

NM06.08.13
MoS2—Carbon Materials Composite with Dual Phase of MoS2 and Their Application for Energy Storage System

View More »

Publishing Alliance

MRS publishes with Springer Nature