The Overcome Defect at ZnO Thin Film Interface by Self-Assembly of Molecule Buffer Layer

Tuning defect is very important for top gate devices to control it well. Especially ZnO thin film, which is deposited by ALD (atomic layer deposition) method, have surface defect formation so that it’s hard to control top-gate devices.<br/>So, in this study, we introduced self-assembly of molecule(SAM) buffer layer. it’s very powerful for adjusting charge transports in ZnO thin film by reducing the trap density at interface. we also report the robust fabrication of ZnO top gate field effect transistors (TG-FET) arrays by using thin SAM buffer layer Al2O3 as top gate oxide. Our devices have 12 times higher mobility than origin ZnO thin film and 100,000 higher on/off ratio than device without buffer layer. Using this new platform, we demonstrated a large scale of transistors arrays with high mobility.