Single-Crystalline 2D Semiconductor Growth and Device Technology

2D transition-metal dichalcogenide semiconductors are promising candidates in future electronics due to unmatched device performance at atomic limit and low-temperature heterogeneous integration. In this talk, I will present our recent advances in this area. The main topics include wafer-scale single-crystal epitaxial growth, uniform bi-layer material growth, dielectric integration and Ohmic contact, and heterogeneous integration with mainstream technology. These advances clearly demonstrate the promise of 2D semiconductors in next-generation electronic and optoelectronic applications.<br/>References:<br/>[1] Weisheng Li et al., Nat. Electron., 2 563 (2019).<br/>[2] Taotao Li et al., Nat. Nanotech., (2021) DOI: 10.1038/s41565-021-00963-8.<br/>[3] Wanqing Meng et al., Nat. Nanotech., (2021) DOI: 10.1038/s41565-021-00966-5.<br/>[4] Zhihao Yu et al. IEDM (2020) DOI: 10.1109/IEDM13553.2020.9371917.<br/>[5] Lei Liu et al. Nature 605, 69(2022).