Hydride Vapor Phase Epitaxy as a Platform for Materials Integration

Hydride vapor phase epitaxy (HVPE) is an epitaxial growth technique developed many decades ago that has seen a resurgence in recent years. HVPE is well-known for producing very pure material at very high growth rates. This led to the development of, for example, high-quality GaN templates on sapphire substrates that enabled nitride devices grown by other techniques. In recent years, however, HVPE has moved into producing nitride and oxide devices on its own, and has now branched into arsenide and phosphide devices as well due to the advent of the Dynamic-HVPE technique. In Dynamic-HVPE, the substrate moves between adjacent growth chambers to create chemically- and structurally-abrupt heterinterfaces, which was not possible using more traditional HVPE methods.<br/><br/>Another beneficial property of HVPE is the ability to tune the kinetics of growth on different surfaces, leading to the ability to create useful surface features. These include peak-and-valley morphologies and other surfaces with stable facets that can be used to create, for example, quantum wires. HVPE growth parameters can also be tuned to planarize surface features when desired. This latter feature may enable simple substrate reuse by planarizing rough morphology resultant from reusing a substrate many times after device exfoliation. This talk will describe different aspects of the HVPE growth technique and how they can be used to develop materials with useful morphology.