MRS Meetings and Events

 

EQ05.04.18 2022 MRS Fall Meeting

Lift-Off Patterning of OLED Active Layer

When and Where

Nov 28, 2022
8:00pm - 10:00pm

Hynes, Level 1, Hall A

Presenter

Co-Author(s)

Seunghan Lee1,Hyobin Ham2,Chang Hyeok Lim1,Hyukmin Kweon3,Do Hwan Kim3,BongSoo Kim2,Moon Sung Kang1

Sogang University1,Ulsan National Institute of Science and Technology (UNIST)2,Hanyang University3

Abstract

Seunghan Lee1,Hyobin Ham2,Chang Hyeok Lim1,Hyukmin Kweon3,Do Hwan Kim3,BongSoo Kim2,Moon Sung Kang1

Sogang University1,Ulsan National Institute of Science and Technology (UNIST)2,Hanyang University3
Active layer patterning of organic light-emitting diode (OLED) is a key step in achieving full-color display application. Although conventional OLED manufacturing is based on thermal evaporation, solution process-based patterning techniques allows low-cost fabrication of large-area display. In this work, we propose a patterning method for OLED active layer done via a lift-off process. The lift-off process is widely used in conventional semiconductor and display industry, but its applications to OLEDs are limited. This is due to the fundamental issue that process solvents (such as stripper) can dissolve/damage the pre-deposited layer that should be partially lifted-off. In particular, the luminescent small molecules of OLED (such as iridium and platinum complexes) are assembled by weak forces. Herein, we present the use of crosslinkable host and guest organic emitters added with a low-temperature thermal initiator serving as the active layer for OLEDs. The thermally crosslinked active layer shows chemical robustness against subsequent solvent-processes without compromising its luminescence characteristics (indeed we found that the luminescence characteristics are improved upon crosslinking the molecules). More importantly, by initiating the crosslinking reactions below the temperature affecting the chemical/structural properties of photoresist, we can apply the crosslinked active layer to conventional lift-off process to form active layer patterns. Based on this, we successfully fabricate a few microns multicolor patterns with a minimum pattern width of 4um and exceptionally low line-width roughness. We believe that this approach suggests an alternative route to form micrometer-scale patterns of solution processible materials.

Keywords

lithography (deposition)

Symposium Organizers

Stefaan De Wolf, King Abdullah University of Science and Technology
Geoffroy Hautier, University Catholique de Louvain
Monica Morales-Masis, University of Twente
Barry Rand, Princeton University

Session Chairs

Stefaan De Wolf
Geoffroy Hautier
Monica Morales-Masis
Barry Rand

In this Session

EQ05.04.01
Low-Temperature Fabrication of BaSnO3 Thin-Films via Solution Combustion

EQ05.04.02
Near-Infrared Phototransistor Using Localized Surface Plasmonic Resonance at ITO Nanoparticle/IGZO Interfaces

EQ05.04.03
Optimization of Lithium Intercalation of Sputtered Indium Tin Oxide Thin Films

EQ05.04.04
Tuning Photoconductivity Properties of Co3O4 Thin Films

EQ05.04.05
Low Dielectric Adhesive through Thiol-Ene Click-Reaction for High-Frequency Electronic Devices

EQ05.04.06
Hierarchical Metal–Semiconductor–Graphene Ternary Nanostructures with Intimate Coupling for Hydrogen Generation

EQ05.04.07
Room-Temperature Fabrication of Highly-Oriented β-Ga2O3 Thin Film on ZnO/AlOx-Buffered Cyclo-Olefin Polymer Substrate via Excimer Laser Annealing of Amorphous Thin Film

EQ05.04.08
Electric Conductivity and Structural Modification of Cobalt Oxide Epitaxial Thin Film at Surface by Excimer Vacuum-Ultraviolet Light Irradiation

EQ05.04.09
Hetero-Interfaced Anti-Ambipolar Phototransistor Capable of Distinguishing Wavelength Bands of Light

EQ05.04.10
GW-BSE and TDDFT Approaches to the Optical Properties of Organic NIR-II Fluorophores

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