MRS Meetings and Events

 

EQ05.04.05 2022 MRS Fall Meeting

Low Dielectric Adhesive through Thiol-Ene Click-Reaction for High-Frequency Electronic Devices

When and Where

Nov 28, 2022
8:00pm - 10:00pm

Hynes, Level 1, Hall A

Presenter

Co-Author(s)

Ji Won Joo1,Ho Sun Lim1

Sookmyung Women's University1

Abstract

Ji Won Joo1,Ho Sun Lim1

Sookmyung Women's University1
With the continuous growth of 5G communication-based high-speed transmission-reception systems, there is a demand for developing a low dielectric material in high-frequency electronic devices. Since the 5G communication system uses a shorter wavelength than the 4G mobile communication, there is a problem with transmission loss because the rate of absorption by materials during the movement of radio waves is high. For this reason, electronic components such as FCCL for 5G mobile communication must exhibit a low dielectric character to reduce transmission loss. Herein, we proposed a fabrication of a low dielectric adhesive through a thiol-ene click reaction between bismaleimide and multifunctional thiol, applicable to advanced electronic devices for 5G communication. The development of the adhesive with a low dielectric constant at a high-frequency range is indispensable while maintaining high adhesion between a copper foil and a low dielectric polymer sheet. We optimized the composition of the adhesive by controlling the ratios of the compounds with alkene or thiol groups. The dielectric constant (ε') measured at 10 GHz ranged from 2.6 to 2.7, which is lower than commercially available adhesives. The peel strength of the low dielectric bond was measured as 1.0 N/mm through a 90° peel test, showing strong adhesion properties between the copper foil and the low dielectric polymer sheet. This low dielectric adhesive could be applied to manufacturing technology of advanced electronic devices for 5G communication in semiconductors, automobiles, mobile phones, and robots.

Symposium Organizers

Stefaan De Wolf, King Abdullah University of Science and Technology
Geoffroy Hautier, University Catholique de Louvain
Monica Morales-Masis, University of Twente
Barry Rand, Princeton University

Session Chairs

Stefaan De Wolf
Geoffroy Hautier
Monica Morales-Masis
Barry Rand

In this Session

EQ05.04.01
Low-Temperature Fabrication of BaSnO3 Thin-Films via Solution Combustion

EQ05.04.02
Near-Infrared Phototransistor Using Localized Surface Plasmonic Resonance at ITO Nanoparticle/IGZO Interfaces

EQ05.04.03
Optimization of Lithium Intercalation of Sputtered Indium Tin Oxide Thin Films

EQ05.04.04
Tuning Photoconductivity Properties of Co3O4 Thin Films

EQ05.04.05
Low Dielectric Adhesive through Thiol-Ene Click-Reaction for High-Frequency Electronic Devices

EQ05.04.06
Hierarchical Metal–Semiconductor–Graphene Ternary Nanostructures with Intimate Coupling for Hydrogen Generation

EQ05.04.07
Room-Temperature Fabrication of Highly-Oriented β-Ga2O3 Thin Film on ZnO/AlOx-Buffered Cyclo-Olefin Polymer Substrate via Excimer Laser Annealing of Amorphous Thin Film

EQ05.04.08
Electric Conductivity and Structural Modification of Cobalt Oxide Epitaxial Thin Film at Surface by Excimer Vacuum-Ultraviolet Light Irradiation

EQ05.04.09
Hetero-Interfaced Anti-Ambipolar Phototransistor Capable of Distinguishing Wavelength Bands of Light

EQ05.04.10
GW-BSE and TDDFT Approaches to the Optical Properties of Organic NIR-II Fluorophores

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