MoS₂ Transistors for Back-End-of-the-Line Si Integration

This paper describes our recent work on developing both the material synthesis and the fabrication technology needed to integrate single-layer molybdenum disulfide (MoS₂) devices at the back-end-of-the-line of fully fabricated Silicon CMOS chips. These devices could significantly improve the performance of future Si chips by enabling compact three-dimensional microsystems with shorter interconnects, lower leakage currents, and increased memory.