Samuel Stranks1
University of Cambridge1
Halide perovskites are promising materials for next-generation light harvesting and light emission applications. However, an absolute understanding of charge carrier recombination on all relevant length scales is essential to maximise their potential in such applications.<br/><br/>Here, I will outline recent work elucidating charge carrier properties in a range of halide perovskite semiconductors from the macroscale down to the nanoscale. I will report on both 3D systems dominated by free carriers and quasi-2D and 2D systems dominated by exciton recombination, highlighting the interplay between radiative recombination, carrier trapping and carrier diffusion. I will show how these photophysical properties relate to material properties, and how this information can help to further drive material and device performance optimisation.