Bottom-up Assembly of Patterned Graphene/MoS₂ Heterostructures

Combining two-dimensional materials into one vertical stack has evolved as an appealing strategy to modify the materials’ properties and enable functional integrity and complexity. Among the heterostructures investigated so far, graphene/MoS₂ (G/MoS₂) heterostructures have drawn particular attention owing to their extraordinary properties and great potential for the use in high-performance devices.^[1-2] The individual layers of such heterostructures are usually held together by van der Waals (vdW) forces. However, for most vdW interfaces, the structural disorders and contaminations induced by the integration steps are not rare, which are detrimental to the interface quality and would severely limit electronic communication and device efficacy. Here, we will present an efficient and facile approach to bottom-up construct covalently bridged G/MoS₂ heterostructures in a spatially defined manner. The formation of these patterned heterostructures was demonstrated by Raman and photoluminescence (PL) spectroscopies and Kelvin probe force microscopy (KPFM). Our approach enables the high throughput generation of covalent hetero-interfaces and precise transcription of spatial patterns from the bottom to the top layer of the heterostructures.^[3]This covalent assembly concept has great potential to be extended to the construction of a broad array of two-layer or multi-layered covalent heterostructures, which is of great importance for future material design and engineering.<br/> <br/><b>References</b><br/>(1) Shih, C.-J.; Wang, Q. H.; Son, Y.; Jin, Z.; Blankschtein, D.; Strano, M. S., <i>ACS Nano </i><b>2014</b>, <i>8</i> (6), 5790-5798.<br/>(2) Li, S.; Liu, Y.; Zhao, X.; Shen, Q.; Zhao, W.; Tan, Q.; Zhang, N.; Li, P.; Jiao, L.; Qu, X., <i>Adv. Mater</i>. <b>2021</b>, 33 (12), 2007480.<br/>(3) Chen, X.; Assebban, M.; Kohring, M.; Bao, L.; Weber, H. B.; Knirsch, K. C.; Hirsch, A., <i>J. Am. Chem. Soc. </i><b>2022</b>, 144 (22), 9645-9650.