In Situ Raman-Electrochemistry for Routinely Characterizing Electronic Properties of Dopped SWCNTs

Electrical conductivity of single wall nanotubes (SWCNTs) plays a critical role in high-performance flexible batteries. Doping SWCNT is a well-known technique to modify their electronic properties and improve electrical conductivity. In this presentation, we demonstrate <i>in situ</i> Raman-electrochemistry as a unique technique for both predicting electronic properties and understanding the charging mechanism of SWCNTs. We demonstrate this by electrochemically doping SWCNT with both chloride and tetraethylammonium tetrafluoroborate to study simultaneous changes in Raman intensity and/or shifts with respect to applied potential. Our study shows hysteresis of the cyclic voltammogram and Raman spectra during doping cycles. We demonstrate the impact of doping on D, G, 2D and RBM bands of the nanotubes at different voltage states.