The growth of the semiconductor industry has been driven by an insatiable demand for more connectivity across countries, organizations and communities. Semiconductor devices have become increasingly critical in enabling advanced functionalities for education, communication, entertainment, automotive, space and medical systems. To meet these demands, semiconductor devices need to be significantly more power efficient and more diverse in functionalities. A multi-disciplinary effort is ongoing worldwide to evaluate new concepts for both logic and memory applications to address these challenges. Devices such as Nanowire-FETs, Nanosheet-FETs, Negative Capacitance-FETs, Tunnel-FETs, Spin Transfer Torque Devices, Resistive-RAM, Magnetic-RAM, Phase Change Memory are some of the options being evaluated. To complement these efforts, extensive work is also ongoing to understand the properties and characteristics of new materials such as Transition Metal Dichalcogenides, Ferroelectrics, Compound Semiconductors, Spin-Based, Magnetic and Phase Change for implementation on various device architectures.
This symposium will bring together scientists and engineers working on the various aspects of the above-mentioned device designs and materials such as growth, interfaces, doping, metallization, process integration and device fabrication. Contributed abstracts in this symposium will be highlighted by invited abstracts from both academia and industry to accelerate the progress in this field.
Advanced Module Engineering
National University of Singapore
Department of Electrical and Computer Engineering
Helmholtz-Zentrum Berlin / Freie Universität Berlin
University of Cambridge