Orlando Auciello1,2
The University of Texas at Dallas1,Original Biomedical Implants2
Orlando Auciello1,2
The University of Texas at Dallas1,Original Biomedical Implants2
This abstract focus on describing the fundamental and applied materials science and engineering being performed to develop a new generation of transformational high-power electronics based on the integration of novel multifunctional nanolaminate-oxides thin films, with super high-dielectric constant, and single crystal diamond. Specific R&D to be discussed include:<br/>Materials Science performed to develop transformational TiO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> nanolaminates, exhibiting<br/>giant dielectric constant (up to k=1000), low leakage current (10<sup>-8</sup> - 10<sup>-9</sup> A/cm<sup>2</sup>, and low losses<br/>(tan d = 0.04), induced by a nanoscale thick Al<sub>2</sub>O<sub>3</sub> layer at the top electrode/nanolaminate interface. The information to be presented will include discussion of the physics responsible for the giant dielectric constant, underlined by the Maxwell-Wagner relaxation mechanism, whereby the dielectric constant is controlled by oxygen vacancies at the nanolaminate interfaces.<br/>Materials science and device design performed to integrate the high-K dielectric nanolaminates on single crystal diamond to fabricate the first integrated TiO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> nanolaminates / single crystal diamond MOSFET devices.<br/>Development of the lithography/RIE process to fabricate diamond-based micro / nano-electronic devices with integrated high-K dielectric TiO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> nano-laminates/single crystal H-diamond surface terminated substrate, and measurement of electrical performance of first unoptimized MOSFET devices, which showed very good promising results.<br/>The presentation will include a discussion of materials science issues that need to be addressed to optimize the performance of future TiO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> nano-laminates/single crystal diamond-based micro/ nano-electronic devices, and investigate new HfO<sub>2</sub>/TiO<sub>x</sub> nanolaminates, involving the key HfO<sub>2</sub> used in gates of current commercial Si-based micro/nano-electronic devices.