Punyashloka Debashis1
Intel Corporation1
Energy efficient and high functionality logic devices are key to sustain the long-term progression of Moore’s law. The Magneto-Electric Spin Orbit (MESO) device is one such beyond-CMOS device that has attracted research attention recently. The MESO device uses an input voltage across a multiferroic material to switch the state of a ferromagnet and uses spin-orbit effects to transduce the magnetization state to an output voltage. This talk will present some of the key experimental advances in reducing the switching voltage, increasing the switching speed as well as improving the output voltage from spin-orbit module. Finally, some important challenges and opportunities towards achieving the target device specification will be discussed.