MRS Meetings and Events

 

QT04.03.02 2024 MRS Spring Meeting

Integrating Novel Nitride Barriers and Conventional Nitride Superconductors into Epitaxial Junctions: Early Steps toward New Materials Platforms for Quantum Computing

When and Where

Apr 23, 2024
5:00pm - 7:00pm

Flex Hall C, Level 2, Summit

Presenter

Co-Author(s)

Sage Bauers1

National Renewable Energy Laboratory1

Abstract

Sage Bauers1

National Renewable Energy Laboratory1
Although nitrogen is approximately four times more prevalent than oxygen in the Earth’s atmosphere, the stability of dinitrogen leads to an order of magnitude fewer known nitrides than oxides. Despite this, many of the known nitrides are important technological materials. Transition metal nitrides (<i>TM</i>Ns) in the rocksalt crystal structure are one such example: these chemically stable, high-symmetry superconductors are well suited for epitaxial thin film integration with common substrates. To extend the functionality of <i>TM</i>Ns and create epitaxial superconductor–semiconductor heterojunctions, suitable rocksalt-structured semiconductors are required. Our team has discovered a series of new rocksalt-structured nitride semiconductors with band gaps ranging from <i>E</i><sub>G</sub>=0.9-2.4 eV, described as either Mg<i>TM</i>N<sub>2</sub> (<i>TM</i>=group 4 transition metal) or Mg<sub>2</sub><i>TM</i>N<sub>3</sub> (<i>TM</i>=group 5 transition metal). The lattice parameters of these new materials are compatible with <i>TM</i>Ns, suggesting the possibility for integration into epitaxial structures, such as Josephson junctions and other circuitry forming superconducting qubits. Here, we study the epitaxial integration of <i>TM</i>Ns on Al<sub>2</sub>O<sub>3</sub> substrates and of Mg<i>TM</i>N<sub>2</sub> and Mg<sub>2</sub><i>TM</i>N<sub>3</sub> compounds onto <i>TM</i>Ns. We optimize <i>TM</i>N growth to repeatably achieve high <i>T</i><sub>C</sub> for epitaxial NbN (15K), TiN (5K), and Nb<sub>0.5</sub>Ti<sub>0.5</sub>N (13K). Using electron and X-ray probes we show that heteroepitaxy can be readily achieved between <i>TM</i>Ns and the novel semiconductors. Epitaxial NbN-Mg<sub>2</sub>NbN<sub>3</sub>-NbN trilayer heterojunctions grown on sapphire are demonstrated with barrier layers down to ~3 nm and crystal coherence across the entire heterojunction stack. However, we also find that the inherent polymorphism of NbN complicates it’s use, motivating the eventual use of other <i>TM</i>Ns such as Nb<sub>0.5</sub>Ti<sub>0.5</sub>N alloys.

Keywords

crystallographic structure | interface | sputtering

Symposium Organizers

Liangzi Deng, University of Houston
Qiang Li, Stony Brook University/Brookhaven National Laboratory
Toshinori Ozaki, Kwansei Gakun University
Ruidan Zhong, Shanghai Jiao Tong University

Symposium Support

Gold
Faraday Factory Japan LLC

Session Chairs

Liangzi Deng
Yusuke Ichino

In this Session

QT04.03.01
Magnetic ac Susceptibility of Superconducting Ta Films for Quantum Computing

QT04.03.02
Integrating Novel Nitride Barriers and Conventional Nitride Superconductors into Epitaxial Junctions: Early Steps toward New Materials Platforms for Quantum Computing

QT04.03.03
Electronic Transport Studies of InAs Quantum Well

QT04.03.04
Investigating The Superconducting and Structural Properties of Trigonal PtBi2 Single Crystals

QT04.03.05
Superconducting Materials Exploration for Quantum Devices

QT04.03.06
Scanning Tunneling Microscopy and Spectroscopy of UTe2

QT04.03.07
Acid-Assisted Soft Chemical Route for Preparing High-Quality Superconducting 2M-WS2

QT04.03.08
Anisotropic Superconductivity in Atomically Thin (Sn1-xInx)Bi2Te4

QT04.03.09
Selective Area Epitaxial Growth of Magnesium Diboride on SiC using Epitaxial Graphene

QT04.03.10
High Entropy Analogues to The Superconducting Face Centered Cubic W-Pt Binary

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Publishing Alliance

MRS publishes with Springer Nature