Ming Lun Tseng1,Bo Ray Lee1,Ting An Shu1,Pei Ying Ho1,Mao Feng Jiang1,Yu Chieh Peng1,Kuan-Heng Chen1,Jia Hua Lee1,Yu Chia Chung1,Yu Jie Wang1,Der-Hsien Lien1,Tzu-En Lin1,Chao-Hsin Chien1,Ray Hua Horng1
National Yang Ming Chiao Tung University1
Ming Lun Tseng1,Bo Ray Lee1,Ting An Shu1,Pei Ying Ho1,Mao Feng Jiang1,Yu Chieh Peng1,Kuan-Heng Chen1,Jia Hua Lee1,Yu Chia Chung1,Yu Jie Wang1,Der-Hsien Lien1,Tzu-En Lin1,Chao-Hsin Chien1,Ray Hua Horng1
National Yang Ming Chiao Tung University1
Deep ultraviolet (DUV) light covers wavelengths from 200 nm to 300 nm and has diverse applications including imaging, sensing, and medical treatments. Developing efficient and robust metasurfaces is crucial for improving the relevant DUV technologies. Here, we present innovative DUV dielectric metasurfaces providing field enhancement and several unique properties. By employing the photon doping effect and including a quasi-bound state in the continuum in the design, we realize a Si metasurface capable of showing a DUV plasmonic resonance. The field enhancement and the durability of biochemistry-related solvents of the sample enable its applications for DUV sensing applications. In addition, to generate strong field enhancement, we use low-loss HfO2 to create a dielectric metasurface. Combining HfO2's optical properties with novel designs results in multiple high-quality factor resonances and significant field enhancement. These results will advance the development of ultrasensitive biosensing chips within this crucial wavelength range.