MRS Meetings and Events

 

EL05.04.12 2024 MRS Spring Meeting

Berry Curvature Dipole Induced Giant Mid-Infrared Second-Harmonic Generation in 2D Weyl Semiconductor

When and Where

Apr 23, 2024
5:00pm - 7:00pm

Flex Hall C, Level 2, Summit

Presenter

Co-Author(s)

Qundong Fu1,Xin Cong2,Xiaodong Xu3,Song Zhu1,Zheng Liu1

Nanyang Technological University1,University of South Florida2,Harbin Institute of Technology3

Abstract

Qundong Fu1,Xin Cong2,Xiaodong Xu3,Song Zhu1,Zheng Liu1

Nanyang Technological University1,University of South Florida2,Harbin Institute of Technology3
Due to its inversion-broken triple helix structure and the nature of Weyl semiconductor, two-dimensional Tellurene (2D Te) is promising to possess a strong nonlinear optical response in the infrared region, which is rarely reported in 2D materials. We demonstrated a giant nonlinear infrared response induced by large Berry curvature dipole (BCD) in the Weyl semiconductor 2D Te. Ultrahigh SHG response was acquired from 2D Te with a large second-order nonlinear optical susceptibility (<i>χ</i><sup>(2)</sup>), which is up to 23.3 times higher than that of monolayer MoS<sub>2</sub> in the range of 700-1500 nm. Notably, distinct from other 2D nonlinear semiconductors, <i>χ</i><sup>(2) </sup>of 2D Te increases extraordinarily with increasing wavelength and reaches up to 5.58 nm/V at ~2300 nm, which is the best infrared performance. Large <i>χ</i><sup>(2)</sup> of 2D Te also enables the high-intensity sum-frequency generation with an ultralow continuous-wave (CW) pump power. Theoretical calculations reveal that the exceptional performance is attributed to the presence of large BCD located at the Weyl points of 2D Te. These results unravel a new linkage between Weyl semiconductor and strong optical nonlinear responses, rendering 2D Te a competitive candidate for highly efficient nonlinear 2D semiconductors in the infrared region.

Keywords

2D materials

Symposium Organizers

Silvija Gradecak, National University of Singapore
Lain-Jong Li, The University of Hong Kong
Iuliana Radu, TSMC Taiwan
John Sudijono, Applied Materials, Inc.

Symposium Support

Gold
Applied Materials

Session Chairs

Lain-Jong Li
John Sudijono

In this Session

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EL05.04.03
Au Nanoparticle Floating-Gate Memristor Array for Low-Power Neuromorphic System

EL05.04.04
Multi-Neuron Connection Using Multi-Terminal Floating-Gate Memristor for Unsupervised Learning

EL05.04.06
Synthesis of Te and Sb Doped Black Phosphorus Single Crystals, Oxidation-Resistance and Room-Temperature Gas Sensing Applications

EL05.04.08
Structural and Physical Properties of Two Distinct Two-Dimensional Lead Halides with Intercalated Cu(II): A Comparative Study

EL05.04.09
Van der Waals Interface Engineering for Enhancemen of Semiconductor Device Performance

EL05.04.10
Monolayer MoS2 with Controllable and Localized Micro-Scale Domains of Strain enabled by Spatially Varying Nanotopography

EL05.04.11
Semiempirical Pseudopotential Method for Low-Dimensional Materials

EL05.04.12
Berry Curvature Dipole Induced Giant Mid-Infrared Second-Harmonic Generation in 2D Weyl Semiconductor

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